Platinum silicide formation: Electron spectroscopy of the platinum‐platinum silicide interface

1974 ◽  
Vol 45 (12) ◽  
pp. 5141-5144 ◽  
Author(s):  
S. Danyluk ◽  
G. E. McGuire
Keyword(s):  
Electron Spectroscopy ◽  
Silicide Formation ◽  
Platinum Silicide

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

1994 ◽  
Vol 299 ◽  
Author(s):  
M. Fernandez ◽  
T. Rodriguez ◽  
A. Almendra ◽  
J. Jimenez-Leube ◽  
H. Wolters
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Oxygen Effect ◽  
Silicide Formation

AbstractIridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

Platinum silicide formation on Si1−yCy epitaxial layers

2013 ◽  
Vol 574 ◽  
pp. 415-420 ◽  
Author(s):  
Kan-Rong Lee ◽  
I-Ping Lin ◽  
Hung-Tai Chang ◽  
Sheng-Wei Lee
Keyword(s):  
Epitaxial Layers ◽  
Silicide Formation ◽  
Platinum Silicide

On the kinetics of platinum silicide formation

2011 ◽  
Vol 98 (8) ◽  
pp. 082102 ◽  
Author(s):  
Erik J. Faber ◽  
Rob A. M. Wolters ◽  
Jurriaan Schmitz
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Effect of Oxidizing Ambients on Platinum Silicide Formation: II . Auger and Backscattering Analyses

1975 ◽  
Vol 122 (12) ◽  
pp. 1732-1736 ◽  
Author(s):  
R. J. Blattner ◽  
C. A. Evans ◽  
S. S. Lau ◽  
J. W. Mayer ◽  
B. M. Ullrich
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide

Phase formation during reactive molybdenum-silicide formation

1990 ◽  
Vol 5 (12) ◽  
pp. 2854-2864 ◽  
Author(s):  
C. M. Doland ◽  
R. J. Nemanich
Keyword(s):  
Thin Film ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hexagonal Phase ◽  
Indirect Evidence ◽  
Silicide Phase ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Silicide formation due to thermal treatment of thin (5–10 nm) molybdenum films on single-crystal, polycrystalline, and hydrogenated amorphous silicon substrates in the temperature range of 100 to 1000 °C was studied, with an emphasis on the initial interactions. The molybdenum deposition, annealing, and characterization using Raman scattering and Auger electron spectroscopy was carried out in UHV in order to minimize the effects of contaminants. Raman spectroscopy is used to distinguish between tetragonal (t-MoSi2) and hexagonal MoSi2 (h-MoSi2). The Raman spectrum of bulk tetragonal MoSi2 exhibits two prominent lines which are associated with the A1g (325 cm−1) and Eg (440 cm−1) modes. The only silicide phases detected in the thin film experiments were t-MoSi2 and h-MoSi2. While hexagonal MoSi2 does not appear in the bulk phase diagram, it is the first silicide phase formed in thin film reactions at a temperature between 300 and 400 °C. The nucleation temperature of h-MoSi2 was the same for Si〈100〉, Si〈111〉, and amorphous Si. Indirect evidence for disordered intermixing of silicon and molybdenum before nucleation of h-MoSi2 is found. Annealing at approximately 800 °C causes the silicide to transform from the hexagonal phase to the tetragonal phase for all substrates. Contaminants interfere with the formation of h-MoSi2 and also retard the transformation of h-MoSi2 to t-MoSi2. For the thin films considered here, the transformation to t-MoSi2 is accompanied by islanding of the silicide film. A lower interfacial energy between the silicon and silicide for h-MoSi2 has been proposed to explain the nucleation of h-MoSi2 before t-MoSi2.

Effects of ion‐implantation‐induced damages and impurity on platinum silicide formation

1982 ◽  
Vol 53 (9) ◽  
pp. 6144-6147 ◽  
Author(s):  
Y. Mashiko ◽  
H. Koyama ◽  
S. Kawazu ◽  
T. Kashiwaki
Keyword(s):  
Ion Implantation ◽  
Silicide Formation ◽  
Platinum Silicide
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