Phosphorus concentration profiles inp‐doped silicon dioxide measured using Auger spectroscopy

1974 ◽  
Vol 45 (1) ◽  
pp. 252-256 ◽  
Author(s):  
C. C. Chang ◽  
A. C. Adams ◽  
G. Quintana ◽  
T. T. Sheng
Keyword(s):  
Silicon Dioxide ◽  
Auger Spectroscopy ◽  
Phosphorus Concentration ◽  
Concentration Profiles ◽  
Doped Silicon

Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films

1988 ◽  
Vol 53 (21) ◽  
pp. 2036-2038 ◽  
Author(s):  
Joseph Z. Xie ◽  
Shyam P. Murarka ◽  
Xin S. Guo ◽  
William A. Lanford
Keyword(s):  
Silicon Dioxide ◽  
Hydrogen Concentration ◽  
Concentration Profiles ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Phosphorus Doped

EFM Study on Ge Island: Carrier Charge and Storage Effect

2010 ◽  
Vol 1260 ◽  
Author(s):  
Zhen Lin ◽  
Pavel Brunkov ◽  
Xueying Ma ◽  
Franck Bassani ◽  
Georges Bremond
Keyword(s):  
Silicon Dioxide ◽  
Electrostatic Force ◽  
Storage Effect ◽  
Silicon Dioxide Layer ◽  
Conductive Material ◽  
Doped Silicon ◽  
Charge Decay ◽  
Memory Applications ◽  
Carrier Charge ◽  
And Storage

AbstractIn this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

IR and RBS studies of RF sputtered films of vanadium doped silicon dioxide

1987 ◽  
Vol 90 (1-3) ◽  
pp. 291-294 ◽  
Author(s):  
J.J. Delima ◽  
A.J. Snell ◽  
K.V. Krishna ◽  
A.E. Owen
Keyword(s):  
Silicon Dioxide ◽  
Sputtered Films ◽  
Doped Silicon

Thermoluminescence Response of Ytterbium-Doped Silicon Dioxide Fiber

2015 ◽  
Vol 49 (4) ◽  
pp. 265-268
Author(s):  
M. A. Saeed ◽  
N. F. Abdul Pattah ◽  
I. Hossain ◽  
H. Wagiran
Keyword(s):  
Silicon Dioxide ◽  
Doped Silicon
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