GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face

1971 ◽  
Vol 42 (5) ◽  
pp. 2074-2081 ◽  
Author(s):  
A. Y. Cho
Keyword(s):  
Surface Structure ◽  
Molecular Beam ◽  
Beam Method

InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method

1986 ◽  
Vol 25 (Part 2, No. 7) ◽  
pp. L598-L600 ◽  
Author(s):  
Toshio Fujii ◽  
Yoshiaki Nakata ◽  
Shunichi Muto ◽  
Satoshi Hiyamizu
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Beam Method

Measurement of the Condensation Coefficient of Mercury by a Molecular Beam Method

1975 ◽  
Vol 97 (1) ◽  
pp. 83-87 ◽  
Author(s):  
U. Narusawa ◽  
G. S. Springer
Keyword(s):  
Molecular Beam ◽  
Mercury Vapor ◽  
Clean Surface ◽  
Condensation Coefficient ◽  
Mercury Surface ◽  
Liquid Mercury ◽  
Beam Method ◽  
Beam Incident

The condensation coefficient of mercury was determined by measuring the number flux of a mercury vapor beam incident on, and reflected from, a liquid mercury surface. For a clean surface the condensation coefficient was found to be between 0.65 and 1.

Initial Buffer Layers on the Growth of InGaP on Si by MBE

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Kawanami ◽  
S. Ghosh ◽  
I. Sakata ◽  
T. Sekigawa
Keyword(s):  
High Temperature ◽  
Surface Structure ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Single Domain ◽  
Buffer Layers ◽  
Structure Control ◽  
Si Substrates ◽  
Direct Growth ◽  
Initial Buffer

AbstractSingle domain InxGa(1-x)P (x=0.3) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with a solid phosphorous source. The effects of interfacial buffer layers such as InGaP (i.e. direct growth without buffer layer), GaP, AlP, and GaAs were examined. Also a Si epitaxial buffer layer was tried to control the Si surface structure. Mirror like surfaces were obtained for all films with RHEED patterns of (2×1) single domain surface structure. PL intensities for all films indicated almost the same values except for the films with a Si epitaxial buffer layer. The films with a Si epitaxial buffer layer had almost three times larger PL intensities than the films without Si epitaxial buffer layer. The results suggest incomplete cleaning of the Si surface by the high temperature (1000 °C) treatment and possibility of surface structure control for Si substrates by a Si epitaxial buffer layer.

Si-MBE SOI

1985 ◽  
Vol 53 ◽  
Author(s):  
T.L. Lin ◽  
S.C. Chen ◽  
K.L. Wang ◽  
S. Iyer
Keyword(s):  
Porous Silicon ◽  
Molecular Beam ◽  
Silicon On Insulator ◽  
Etch Pit Density ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Etch Pit ◽  
Beam Method ◽  
Step Growth ◽  
Van Der Pauw

ABSTRACT100 μm-wide silicon-on-insulator (SOI) structures have been accomplished by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon anid subsequent lateral-enhanced oxidation of porous silicon through pattern widows. A silicon beam method was used for insitu cleaning of Si surface at 750°C, and the effectiveness of this method was demonstrated by Auger electron spectroscopy and checked by the etch-pit density of the grown film. A two-step growth process of Si MBE was used to grow epitaxial layers of high quality. An electron mobility of 1300 cm2V-1s-1 was obtained by van der Pauw measurements.

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