Field‐dependent grain boundary barriers as a cause of carrier drift velocity saturation in organic solids

1985 ◽  
Vol 58 (11) ◽  
pp. 4440-4441 ◽  
Author(s):  
A. Szymański
Keyword(s):  
Grain Boundary ◽  
Drift Velocity ◽  
Organic Solids ◽  
Velocity Saturation ◽  
Field Dependent

scholarly journals Effect of Mobility on (I-V) Characteristics of Gaas MESFET

2017 ◽  
Vol 7 (1) ◽  
pp. 169
Author(s):  
M Azizi ◽  
C Azizi
Keyword(s):  
Experimental Data ◽  
Active Region ◽  
Mobility Model ◽  
Velocity Saturation ◽  
Gaas Mesfet ◽  
Mathematical Expressions ◽  
Current Voltage ◽  
Simulation Based ◽  
Field Dependent ◽  
Frame Work

<p class="Titre51"><span lang="EN-US">We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.</span></p>

Drift velocity saturation in MOS transistors

1970 ◽  
Vol 17 (6) ◽  
pp. 481-482 ◽  
Author(s):  
G. Baum ◽  
H. Beneking
Keyword(s):  
Drift Velocity ◽  
Mos Transistors ◽  
Velocity Saturation
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