Experimental observations of the effects of oxide charge inhomogeneity on fast surface state density from high−frequency MOS capacitance−voltage characteristics

1975 ◽  
Vol 26 (7) ◽  
pp. 378-380 ◽  
Author(s):  
M. J. McNutt ◽  
C. T. Sah
Keyword(s):  
Surface State ◽  
High Frequency ◽  
State Density ◽  
Oxide Charge ◽  
Surface State Density ◽  
Capacitance Voltage

Surface state density decrease in nanostructured polycrystalline SnO2: modelling and experimental evidence

2004 ◽  
Vol 100 (1-2) ◽  
pp. 283-286 ◽  
Author(s):  
C. Malagù ◽  
M.C. Carotta ◽  
H. Fissan ◽  
V. Guidi ◽  
M.K. Kennedy ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Surface State ◽  
State Density ◽  
Surface State Density ◽  
Density Decrease

Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments

1988 ◽  
Vol 27 (Part 2, No. 11) ◽  
pp. L2177-L2179 ◽  
Author(s):  
Hideki Hasegawa ◽  
Toshiya Saitoh ◽  
Seiichi Konishi ◽  
Hirotatsu Ishii ◽  
Hideo Ohno
Keyword(s):  
Surface State ◽  
State Density ◽  
Surface Treatments ◽  
Surface State Density

Low- and High-Frequency C–V Characteristics of Au/n-GaN/n-GaAs

2018 ◽  
Vol 18 (06) ◽  
pp. 1850039
Author(s):  
Abderrezzaq Ziane ◽  
Mohamed Amrani ◽  
Abdelaziz Rabehi ◽  
Zineb Benamara
Keyword(s):  
Schottky Diode ◽  
High Frequency ◽  
High Vacuum ◽  
Low Frequency ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Ultra High Vacuum ◽  
Active Nitrogen ◽  
Capacitance Voltage

Au/GaN/GaAs Schottky diode created by the nitridation of n-GaAs substrate which was exposed to a flow of active nitrogen created by a discharge source with high voltage in ultra-high vacuum with two different thicknesses of GaN layers (0.7[Formula: see text]nm and 2.2[Formula: see text]nm), the I–V and capacitance–voltage (C–V) characteristics of the Au/n-GaN/n-GaAs structures were studied for low- and high-frequency at room temperature. The measurements of I–V of the Au/n-GaN/n-GaAs Schottky diode were found to be strongly dependent on bias voltage and nitridation process. The electrical parameters are bound by the thickness of the GaN layer. The capacitance curves depict a behavior indicating the presence of interface state density, especially in the low frequency. The interface states density was calculated using the high- and low-frequency capacitance curves and it has been shown that the interface states density decreases with increasing of nitridation of the GaAs.

Air stabilized (001)p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density

1994 ◽  
Vol 65 (2) ◽  
pp. 186-188 ◽  
Author(s):  
D. Yan ◽  
E. Look ◽  
X. Yin ◽  
Fred H. Pollak ◽  
J. M. Woodall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface State ◽  
Molecular Beam ◽  
State Density ◽  
Surface State Density ◽  
P Type ◽  
Reduced Surface
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