Thickness‐Dependent Oscillatory Behavior of Resistivity and Hall Coefficient in Thin Single‐Crystal Bismuth Films

1969 ◽  
Vol 40 (2) ◽  
pp. 492-495 ◽  
Author(s):  
V. P. Duggal ◽  
Raj Rup
Keyword(s):  
Single Crystal ◽  
Hall Coefficient ◽  
Oscillatory Behavior ◽  
Bismuth Films

scholarly journals Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2010
Author(s):  
Elena S. Makarova ◽  
Anastasiia S. Tukmakova ◽  
Anna V. Novotelnova ◽  
Vladimir A. Komarov ◽  
Vasilisa A. Gerega ◽  
...  
Keyword(s):  
Single Crystal ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
Mica Substrate ◽  
Sensing Applications ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Bismuth Films ◽  
Evaporation Technique ◽  
Zone Recrystallization

We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 μ m compared to 10–30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.

Size effect in the low-field Hall coefficient of single-crystal copper films

1985 ◽  
Vol 61 (3-4) ◽  
pp. 281-289 ◽  
Author(s):  
I. Sakamoto ◽  
M. Fukuhara ◽  
Y. Koide ◽  
K. Yonemitsu
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Hall Coefficient ◽  
Copper Films ◽  
Single Crystal Copper ◽  
Low Field

Anomalies in the Hall Coefficient of Bismuth Films

1973 ◽  
Vol 12 (2) ◽  
pp. 310-311 ◽  
Author(s):  
Masasi Inoue ◽  
Hisao Yagi ◽  
Yukio Tamaki
Keyword(s):  
Hall Coefficient ◽  
Bismuth Films

The electrical properties of graphite

1953 ◽  
Vol 217 (1128) ◽  
pp. 9-26 ◽  
Keyword(s):  
Single Crystal ◽  
Free Path ◽  
Hall Coefficient ◽  
Mean Free Path ◽  
Free Electrons ◽  
Satisfactory Explanation ◽  
Wide Range ◽  
The Mean ◽  
Positive Holes ◽  
Crystalline Graphite

The Hall coefficient and resistivity of a range of polycrystalline graphites with different crystal sizes and a single crystal of Travancore graphite have been measured over a wide range of temperature. The number of free electrons has been found to be approximately 6x10 18 per cm 3 at room temperature; the variation with temperature cannot be accurately determined. The deficit of electrons in poorly crystalline graphite gives rise to positive Hall coefficients. Quenching removes electrons, and a study of this process has enabled the ratio of the mobilities of positive holes and electrons to be estimated at 0·80. An interesting effect has been observed in the variation of the Hall coefficient of the single crystal with field; no satisfactory explanation has been found for this phenomenon. The resistivity of polycrystalline graphite depends on the density and on the orientation and size of the crystals. From the variation of resistivity with temperature and the size of the crystals, the mean free path due to thermal scattering, has been found to be 2350 Å at 273° K; the variation of mean free path with temperature has been deduced. The product of effective mass and velocity of the free electrons has been determined as a function of temperature; the accuracy is limited by uncertainties in the number of free electrons.

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