Radiative Tunneling in GaAs Abrupt Asymmetrical Junctions

H. C. Casey; Donald J. Silversmith

doi:10.1063/1.1657039

Radiative Tunneling in GaAs Abrupt Asymmetrical Junctions

Journal of Applied Physics ◽

10.1063/1.1657039 ◽

1969 ◽

Vol 40 (1) ◽

pp. 241-256 ◽

Cited By ~ 31

Author(s):

H. C. Casey ◽

Donald J. Silversmith

Keyword(s):

Radiative Tunneling

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Radiative tunneling in parallel and cross electric‐magnetic fields in InSb

Journal of Applied Physics ◽

10.1063/1.1662013 ◽

1973 ◽

Vol 44 (10) ◽

pp. 4627-4632 ◽

Cited By ~ 3

Author(s):

Tung‐Iin Tsai ◽

G. Thomas

Keyword(s):

Magnetic Fields ◽

Radiative Tunneling

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Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

Solid-State Electronics ◽

10.1016/s0038-1101(02)00190-9 ◽

2002 ◽

Vol 46 (12) ◽

pp. 2291-2294 ◽

Cited By ~ 33

Author(s):

X.A Cao ◽

S.F LeBoeuf ◽

K.H Kim ◽

P.M Sandvik ◽

E.B Stokes ◽

...

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Single Quantum ◽

Single Quantum Well ◽

Light Emitting ◽

Radiative Tunneling

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Non-Radiative Recombination in a-Si:H

MRS Proceedings ◽

10.1557/proc-336-189 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 3

Author(s):

M. Schubert ◽

R. Stachowitz ◽

R. Saleh ◽

W. Fuhs

Keyword(s):

Low Temperature ◽

Radiative Recombination ◽

Defect Density ◽

Low Frequency ◽

Lifetime Distribution ◽

Geminate Recombination ◽

Frequency Range ◽

Defect States ◽

Entire Frequency Range ◽

Radiative Tunneling

ABSTRACTFrequency-resolved photoluminescence spectroscopy (FRS) is used to study non-radiative recombination in a-Si:H using generation rates sufficiently small to garantee geminate recombination at low temperature. The quenching of the photoluminescence by a higher defect density ND and an increase of temperature influences the QFRS spectra differently: Whereas for increasing ND the quenching of the signal is more pronounced on the low frequency side raising temperature leads to a uniform decrease in the entire frequency range. The dependence of the lifetime distribution on ND is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

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