Valence band density of states and core level shifts of AgGaS2as determined by x‐ray photoemission

1973 ◽  
Vol 23 (2) ◽  
pp. 60-61 ◽  
Author(s):  
M. J. Luciano ◽  
C. J. Vesely
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Core Level ◽  
X Ray ◽  
Level Shifts

Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

1995 ◽  
Vol 386 ◽  
Author(s):  
J. L. Alay ◽  
M. Fukuda ◽  
C. H. Bjorkman ◽  
K. Nakagawa ◽  
S. Sasaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Core Level ◽  
Band Alignment ◽  
X Ray ◽  
Charging Effect

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

Core Level Shifts and Grain Boundary Cohesion

1998 ◽  
Vol 4 (S2) ◽  
pp. 766-767
Author(s):  
D. A. Muller
Keyword(s):  
Charge Transfer ◽  
Valence Band ◽  
Core Level ◽  
Level Shift ◽  
The Core ◽  
Metallic Interfaces ◽  
Level Shifts ◽  
Electron Energy Loss ◽  
Valence Band Width

The role of core level shifts at metallic interfaces has often been ignored in electron energy loss spectroscopy (EELS) even though very small changes in bond length can lead to large core level shifts. However, the popular interpretation of core level shifts as measures of charge transfer is highly problematic. For instance, in binary alloys systems, the core level shifts can be the same sign for both atomic constituents[l]. The simple interpretation would require that both atomic species had lost or gained charge. Further, the signs of the core level shifts can be opposite to those expected from electronegativity arguments[2]. A core level shift (CLS) is still possible, even when no charge transfer occurs. As illustrated in Fig. 1, if the valence band width is increased, the position of the center of the valence band with respect to the Fermi energy will change (as the number of electrons remains unchanged).

DICHROISM IN ANGLE-RESOLVED PHOTOEMISSION FROM Pt(111)

2002 ◽  
Vol 09 (02) ◽  
pp. 883-888 ◽  
Author(s):  
G. H. FECHER ◽  
J. BRAUN ◽  
A. OELSNER ◽  
CH. OSTERTAG ◽  
G. SCHÖNHENSE
Keyword(s):  
Circular Dichroism ◽  
Band Structure ◽  
Valence Band ◽  
Single Step ◽  
Core Level ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Band Emission ◽  
First Results ◽  
Circular Dichroïsm

The angular dependence of the circular dichroism in photoemission from Pt(111) was investigated for excitation with VUV and soft X-ray radiation. VUV excitation was used to probe band structure and the circular dichroism for valence band emission. The measurements are compared to full relativistic single step photoemission calculations. XPS was used to investigate the circular dichroism in emission from the 4f core level. In this case, the dichroism is induced by photoelectron diffraction. First results from single step core level calculations are compared to the experimental observations.

X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100): A model for N 1s core-level shifts in silicon oxynitride films

2004 ◽  
Vol 95 (4) ◽  
pp. 1963-1968 ◽  
Author(s):  
J. Eng ◽  
I. A. Hubner ◽  
J. Barriocanal ◽  
R. L. Opila ◽  
D. J. Doren
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Level Shifts

Valence Band Density of States of Palladium Silicides Studied by X-Ray Emission Spectroscopy (XES)

1993 ◽  
Vol 32 (Part 2, No. 4B) ◽  
pp. L597-L600 ◽  
Author(s):  
Satoshi Kawamoto ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Hatsuo Nakamura ◽  
Motohiro Iwami ◽  
...  
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Emission Spectroscopy ◽  
X Ray

Au surface density of states and surface core-level shifts inCu3Au(001)

1986 ◽  
Vol 34 (2) ◽  
pp. 1343-1345 ◽  
Author(s):  
S. B. DiCenzo ◽  
P. H. Citrin ◽  
E. H. Hartford ◽  
G. K. Wertheim
Keyword(s):  
Density Of States ◽  
Surface Density ◽  
Core Level ◽  
Level Shifts

Electronic density of states and the x-ray photoelectron spectra of the valence band of Cu-Pd alloys

1986 ◽  
Vol 33 (4) ◽  
pp. 2370-2379 ◽  
Author(s):  
H. Winter ◽  
P. J. Durham ◽  
W. M. Temmerman ◽  
G. M. Stocks
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectra ◽  
Electronic Density ◽  
X Ray ◽  
Electronic Density Of States

Valence Band Density of States of the Manganese Silicides Studied by Soft X-Ray Emission Spectroscopy

1998 ◽  
Vol 67 (1) ◽  
pp. 230-233 ◽  
Author(s):  
Jinliang Wang ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Emission Spectroscopy ◽  
X Ray
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