Hafnium‐Silicon Schottky Barriers: Large Barrier Height on p‐Type Silicon and Ohmic Behavior on n‐Type Silicon

1971 ◽  
Vol 19 (3) ◽  
pp. 71-73 ◽  
Author(s):  
A. N. Saxena
Keyword(s):  
Barrier Height ◽  
Schottky Barriers ◽  
Type Silicon ◽  
Ohmic Behavior ◽  
P Type

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Schottky Diodes on Si1-x-yGexCy Alloys.

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Mamnor ◽  
C. Guedj ◽  
P. Boucaud ◽  
F. Meyer ◽  
D. Bouchier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Strain Relaxation ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
Germanium Content ◽  
Hole Effective Mass ◽  
P Type

ABSTRACTWe have recently investigated the properties of W/Si1-xGex films prepared by rapid thermal chemical vapor deposition (RTCVD). The barrier height on p-type, ΦBp, varies as the band gap with the germanium content for totally relaxed films, and increases with strain relaxation, while that on n-type remains rather constant. These results suggest that the Fermi level is pinned relative to the conduction band at the interface of the binary alloy and that the measurement of Schottky barriers is a suitable tool to follow band gap variations. In this work, the effects of carbon incorporation on Schottky barriers have been investigated. The study has been performed on Si1-x-yGexCy films (0≤y≤1.35% with x=10%). The strain retained in the films was determined by X-ray diffraction. Infrared absorption measurements have shown that the carbon is incorporated on substitutional sites. The electrical results indicate the same trends than those observed on the binary alloys, the barrier height on n-type remains rather constant while the barrier height on p-type varies. Adding C leads to an increase of ΦBp, but this increase is too large to be explained in terms of variation of the band gap. The influence of other parameters, such as the doping level and the hole effective mass is discussed.

Complementary Schottky barriers to n- and p-type silicon with SnO2 electrodes

1979 ◽  
Vol 22 (5) ◽  
pp. 525-526 ◽  
Author(s):  
Kenji Kajiyama ◽  
Kota Onuki ◽  
Yasuo Seki
Keyword(s):  
Schottky Barriers ◽  
Type Silicon ◽  
P Type

Schottky barriers on p-type silicon

1971 ◽  
Vol 14 (1) ◽  
pp. 71-75 ◽  
Author(s):  
B.L. Smith ◽  
E.H. Rhoderick
Keyword(s):  
Schottky Barriers ◽  
Type Silicon ◽  
P Type

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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