scholarly journals High Resolution Focused Ion Beams: FIB and Its Applications High Resolution Focused Ion Beams: FIB and Its Applications , Jon Orloff , Mark Utlaut , and Lynwood Swanson Kluwer Academic/Plenum, New York, 2003. $145.00 (303 pp.). ISBN 0-306-47350-X

Physics Today ◽  
2004 ◽  
Vol 57 (1) ◽  
pp. 54-55 ◽  
Author(s):  
Alfred Wagner
Keyword(s):  
New York ◽  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams

High-resolution direct-write patterning using focused ion beams

MRS Bulletin ◽  
2014 ◽  
Vol 39 (4) ◽  
pp. 336-341 ◽  
Author(s):  
Leonidas E. Ocola ◽  
Chad Rue ◽  
Diederik Maas
Keyword(s):  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Direct Write ◽  
Image Position

Abstract

scholarly journals Study of ion beam induced chemical effects in silicon with a downsized high resolution X-ray spectrometer for use with focused ion beams

2016 ◽  
Vol 31 (11) ◽  
pp. 2293-2304 ◽  
Author(s):  
I. Božičević Mihalić ◽  
S. Fazinić ◽  
T. Tadić ◽  
D. Cosic ◽  
M. Jakšić
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray ◽  
Chemical Effects ◽  
Ccd Detector

A downsized wavelength dispersive X-ray spectrometer, employing a flat crystal and a CCD detector for use with focused ion beams has been constructed and employed to study ion beam induced chemical effects in Si K X-ray spectra from silicon and its selected compounds.

High‐resolution focused ion beams

1993 ◽  
Vol 64 (5) ◽  
pp. 1105-1130 ◽  
Author(s):  
Jon Orloff
Keyword(s):  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams

Exploration of the ultimate patterning potential achievable with high resolution focused ion beams

2005 ◽  
Vol 80 (1) ◽  
pp. 187-194 ◽  
Author(s):  
J. Gierak ◽  
D. Mailly ◽  
P. Hawkes ◽  
R. Jede ◽  
L. Bruchhaus ◽  
...  
Keyword(s):  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams

Superior 2X2 Slides

1975 ◽  
Vol 33 ◽  
pp. 158-159
Author(s):  
Harry Schaefer ◽  
Bruce Wetzel
Keyword(s):  
New York ◽  
High Resolution ◽  
Black And White ◽  
Fine Grain ◽  
White Film

High resolution 24mm X 36mm positive transparencies can be made from original black and white negatives produced by SEM, TEM, and photomicrography with ease, convenience, and little expense. The resulting 2in X 2in slides are superior to 3¼in X 4in lantern slides for storage, transport, and sturdiness, and projection equipment is more readily available. By mating a 35mm camera directly to an enlarger lens board (Fig. 1), one combines many advantages of both. The negative is positioned and illuminated with the enlarger and then focussed and photographed with the camera on a fine grain black and white film.Specifically, a Durst Laborator 138 S 5in by 7in enlarger with 240/200 condensers and a 500 watt Opale bulb (Ehrenreich Photo-Optical Industries, Inc., New York, NY) is rotated to the horizontal and adjusted for comfortable eye level viewing.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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