scholarly journals Introduction to focused ion beams: Instrumentation, theory, techniques and practice By Lucille A. Giannuzzi and Fred A. Stevie Springer, New York, 2005 ISBN 038723116-1; hard cover; 347 pages, $79.95

Scanning ◽  
2006 ◽  
Vol 27 (1) ◽  
pp. 56-56 ◽  
Author(s):  
Andrew Minor
Keyword(s):  
New York ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Hard Cover

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

scholarly journals Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Transport ◽  
Ion Beams ◽  
Focused Ion Beams

Direct‐Writing of 2D Diodes by Focused Ion Beams

2021 ◽  
pp. 2102708
Author(s):  
Yanran Liu ◽  
Yuanyuan Qu ◽  
Yue Liu ◽  
Hang Yin ◽  
Jinglun Liu ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Direct Writing
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