High-resolution direct-write patterning using focused ion beams

MRS Bulletin ◽  
2014 ◽  
Vol 39 (4) ◽  
pp. 336-341 ◽  
Author(s):  
Leonidas E. Ocola ◽  
Chad Rue ◽  
Diederik Maas
Keyword(s):  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Direct Write ◽  
Image Position

Abstract

scholarly journals Study of ion beam induced chemical effects in silicon with a downsized high resolution X-ray spectrometer for use with focused ion beams

2016 ◽  
Vol 31 (11) ◽  
pp. 2293-2304 ◽  
Author(s):  
I. Božičević Mihalić ◽  
S. Fazinić ◽  
T. Tadić ◽  
D. Cosic ◽  
M. Jakšić
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray ◽  
Chemical Effects ◽  
Ccd Detector

A downsized wavelength dispersive X-ray spectrometer, employing a flat crystal and a CCD detector for use with focused ion beams has been constructed and employed to study ion beam induced chemical effects in Si K X-ray spectra from silicon and its selected compounds.

High‐resolution focused ion beams

1993 ◽  
Vol 64 (5) ◽  
pp. 1105-1130 ◽  
Author(s):  
Jon Orloff
Keyword(s):  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams

Exploration of the ultimate patterning potential achievable with high resolution focused ion beams

2005 ◽  
Vol 80 (1) ◽  
pp. 187-194 ◽  
Author(s):  
J. Gierak ◽  
D. Mailly ◽  
P. Hawkes ◽  
R. Jede ◽  
L. Bruchhaus ◽  
...  
Keyword(s):  
High Resolution ◽  
Ion Beams ◽  
Focused Ion Beams

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Three-fold astigmatism: An important TEM aberration

1993 ◽  
Vol 51 ◽  
pp. 972-973 ◽  
Author(s):  
O.L. Krivanek ◽  
M.L. Leber
Keyword(s):  
High Resolution ◽  
Spatial Frequency ◽  
Field Emission ◽  
Azimuthal Angle ◽  
Hollow Cone ◽  
Small Probe ◽  
Wide Range ◽  
High Resolution Images ◽  
Image Position

Three-fold astigmatism resembles regular astigmatism, but it has 3-fold rather than 2-fold symmetry. Its contribution to the aberration function χ(q) can be written as:where A3 is the coefficient of 3-fold astigmatism, λ is the electron wavelength, q is the spatial frequency, ϕ the azimuthal angle (ϕ = tan-1 (qy/qx)), and ϕ3 the direction of the astigmatism.Three-fold astigmatism is responsible for the “star of Mercedes” aberration figure that one obtains from intermediate lenses once their two-fold astigmatism has been corrected. Its effects have been observed when the beam is tilted in a hollow cone over a wide range of angles, and there is evidence for it in high resolution images of a small probe obtained in a field emission gun TEM/STEM instrument. It was also expected to be a major aberration in sextupole-based Cs correctors, and ways were being developed for dealing with it on Cs-corrected STEMs.

scholarly journals Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Transport ◽  
Ion Beams ◽  
Focused Ion Beams
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