Trench Pd/Si metal‐oxide‐semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor

1990 ◽  
Vol 57 (25) ◽  
pp. 2686-2688 ◽  
Author(s):  
Y. K. Fang ◽  
S. B. Hwang ◽  
C. Y. Lin ◽  
C. C. Lee
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Gas Sensor ◽  
High Sensitivity ◽  
Metal Oxide Semiconductor ◽  
Hydrogen Gas ◽  
Schottky Barrier Diode ◽  
Oxide Semiconductor

AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

2004 ◽  
Vol 84 (7) ◽  
pp. 1123-1125 ◽  
Author(s):  
B. S. Kang ◽  
F. Ren ◽  
B. P. Gila ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Metal Oxide Semiconductor ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Semiconductor Diode

scholarly journals Field Study of Metal Oxide Semiconductor Gas Sensors in Temperature Cycled Operation for Selective VOC Monitoring in Indoor Air

Atmosphere ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 647
Author(s):  
Tobias Baur ◽  
Johannes Amann ◽  
Caroline Schultealbert ◽  
Andreas Schütze
Keyword(s):  
Air Quality ◽  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Indoor Air ◽  
Ambient Air ◽  
Quantitative Agreement ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temporal Resolution

More and more metal oxide semiconductor (MOS) gas sensors with digital interfaces are entering the market for indoor air quality (IAQ) monitoring. These sensors are intended to measure volatile organic compounds (VOCs) in indoor air, an important air quality factor. However, their standard operating mode often does not make full use of their true capabilities. More sophisticated operation modes, extensive calibration and advanced data evaluation can significantly improve VOC measurements and, furthermore, achieve selective measurements of single gases or at least types of VOCs. This study provides an overview of the potential and limits of MOS gas sensors for IAQ monitoring using temperature cycled operation (TCO), calibration with randomized exposure and data-based models trained with advanced machine learning. After lab calibration, a commercial digital gas sensor with four different gas-sensitive layers was tested in the field over several weeks. In addition to monitoring normal ambient air, release tests were performed with compounds that were included in the lab calibration, but also with additional VOCs. The tests were accompanied by different analytical systems (GC-MS with Tenax sampling, mobile GC-PID and GC-RCP). The results show quantitative agreement between analytical systems and the MOS gas sensor system. The study shows that MOS sensors are highly suitable for determining the overall VOC concentrations with high temporal resolution and, with some restrictions, also for selective measurements of individual components.

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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