Composition and orientation dependence of electrical properties of epitaxial Pb(ZrxTi1−x)O3 thin films grown using metalorganic chemical vapor deposition

2004 ◽  
Vol 95 (6) ◽  
pp. 3111-3115 ◽  
Author(s):  
Takahiro Oikawa ◽  
Masanori Aratani ◽  
Hiroshi Funakubo ◽  
Keisuke Saito ◽  
Manabu Mizuhira
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Orientation Dependence ◽  
Metalorganic Chemical

Thermoelectric and Electrical Properties of InSb Thin Films Prepared by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 980 ◽  
Author(s):  
Masashi Matsumoto ◽  
Jun Yamazaki ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
A Value ◽  
Maximum Value ◽  
Insb Thin Films ◽  
Metalorganic Chemical

AbstractWe studied the thermoelectric and electrical properties of InSb thin films prepared by metalorganic chemical vapor deposition. The thermoelectric properties were evaluated using power factor (Pf =α2/Ï), which is an important criterion, and a value of 10-3 W/mK2 is a standard for practical use. Maximum value of Pf was 2.4×10-3W/mK2 at 600K for 1-μm-thick InSb, 3.4×10-3W/mK2 at 600K for 3-μm-thick InSb, and 5.8×10-3W/mK2 at 600K for 5-μm-thick InSb. On the other hand, the maximum Pf of bulk-InSb was 5.4×10-3W/mK2 at 600K.

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