Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

1999 ◽  
Vol 75 (13) ◽  
pp. 1970-1972 ◽  
Author(s):  
Katsuyuki Ishikawa ◽  
Hiroshi Funakubo
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Thermoelectric and Electrical Properties of InSb Thin Films Prepared by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 980 ◽  
Author(s):  
Masashi Matsumoto ◽  
Jun Yamazaki ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
A Value ◽  
Maximum Value ◽  
Insb Thin Films ◽  
Metalorganic Chemical

AbstractWe studied the thermoelectric and electrical properties of InSb thin films prepared by metalorganic chemical vapor deposition. The thermoelectric properties were evaluated using power factor (Pf =α2/Ï), which is an important criterion, and a value of 10-3 W/mK2 is a standard for practical use. Maximum value of Pf was 2.4×10-3W/mK2 at 600K for 1-μm-thick InSb, 3.4×10-3W/mK2 at 600K for 3-μm-thick InSb, and 5.8×10-3W/mK2 at 600K for 5-μm-thick InSb. On the other hand, the maximum Pf of bulk-InSb was 5.4×10-3W/mK2 at 600K.

Sign in / Sign up

Export Citation Format

Share Document