Structural and electrical properties of SrTiO3 thin films prepared by plasma enhanced metalorganic chemical vapor deposition

1999 ◽  
Vol 17 (4) ◽  
pp. 1982-1986 ◽  
Author(s):  
Y. B. Hahn ◽  
D. O. Kim
2006 ◽  
Vol 980 ◽  
Author(s):  
Masashi Matsumoto ◽  
Jun Yamazaki ◽  
Shigeo Yamaguchi

AbstractWe studied the thermoelectric and electrical properties of InSb thin films prepared by metalorganic chemical vapor deposition. The thermoelectric properties were evaluated using power factor (Pf =α2/Ï), which is an important criterion, and a value of 10-3 W/mK2 is a standard for practical use. Maximum value of Pf was 2.4×10-3W/mK2 at 600K for 1-μm-thick InSb, 3.4×10-3W/mK2 at 600K for 3-μm-thick InSb, and 5.8×10-3W/mK2 at 600K for 5-μm-thick InSb. On the other hand, the maximum Pf of bulk-InSb was 5.4×10-3W/mK2 at 600K.


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