Epitaxial crystallization during 600 °C furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions
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2002 ◽
Vol 149
(6)
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pp. C301
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2002 ◽
Vol 12
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pp. 69-74
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2017 ◽
Vol 19
(8)
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pp. 1700193
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