Epitaxial crystallization during 600 °C furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions

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Author(s):  
Jyoji Nakata
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Rajiv Sharma ◽  
...  

2017 ◽  
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pp. 1700193 ◽  
Author(s):  
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Bert De Roo ◽  
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1993 ◽  
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pp. 1710-1714 ◽  
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