Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

2003 ◽  
Vol 83 (23) ◽  
pp. 4713-4715 ◽  
Author(s):  
Qing-Xuan Yu ◽  
Bo Xu ◽  
Qi-Hong Wu ◽  
Yuan Liao ◽  
Guan-Zhong Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Gan Heterostructure

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

2018 ◽  
Vol 12 (04) ◽  
pp. 1 ◽  
Author(s):  
Zengcheng Li ◽  
Legong Liu ◽  
Yingnan Huang ◽  
Meixin Feng ◽  
Jianxun Liu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Carbon Incorporation ◽  
Light Emitting ◽  
Near Ultraviolet

scholarly journals Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn∕Ag microcontacts

2006 ◽  
Vol 89 (14) ◽  
pp. 141123 ◽  
Author(s):  
Jong Kyu Kim ◽  
J.-Q. Xi ◽  
Hong Luo ◽  
E. Fred Schubert ◽  
Jaehee Cho ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Emitting ◽  
Near Ultraviolet

Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode

2017 ◽  
Vol 38 (6) ◽  
pp. 735-741
Author(s):  
聂晓辉 NIE Xiao-hui ◽  
王小兰 WANG Xiao-lan ◽  
莫春兰 MO Chun-lan ◽  
张建立 ZHANG Jian-li ◽  
潘 拴 PAN Shuan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Optical And Electrical Properties ◽  
Light Emitting ◽  
Near Ultraviolet

Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L975-L977 ◽  
Author(s):  
Takahiro Deguchi ◽  
Kosuke Torii ◽  
Kazuhiro Shimada ◽  
Takayuki Sota ◽  
Ryuji Matsuo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ultraviolet Light ◽  
Active Layer ◽  
Light Emitting Diode ◽  
Light Emitting
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