White light emitting diode synthesis using near ultraviolet light excitation on Zinc oxide–Silicon dioxide nanocomposite

2008 ◽  
Vol 59 (7) ◽  
pp. 722-725 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaisamy ◽  
N. Rama ◽  
M.S. Ramachandra Rao
Keyword(s):  
Zinc Oxide ◽  
Silicon Dioxide ◽  
Ultraviolet Light ◽  
White Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Light Excitation

A novel near-ultraviolet-light excitable Eu3+-doped Sr2LaTaO6 red phosphor for white-light-emitting diodes

Optik ◽  
2021 ◽  
Vol 240 ◽  
pp. 166908
Author(s):  
Qifeng Tang ◽  
Tao Yang ◽  
Haifeng Huang ◽  
Jinqing Ao ◽  
Biyou Peng ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
White Light ◽  
Light Emitting Diodes ◽  
Red Phosphor ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
White Light Emitting Diodes

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

Synthesis and luminescence properties of the red phosphor CaZrO3:Eu3+ for white light-emitting diode application

Open Physics ◽  
2011 ◽  
Vol 9 (4) ◽  
Author(s):  
Junli Huang ◽  
Liya Zhou ◽  
Yuwei Lan ◽  
Fuzhong Gong ◽  
Qunliang Li ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Red Light ◽  
Average Diameter ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Light Region

AbstractEu3+-doped CaZrO3 phosphor with perovskite-type structure was synthesized by the high temperature solid-state method. The samples were characterized by X-ray diffraction, scanning electron microscopy, fluorescence spectrophotometer and UV-vis spectrophotometer, respectively. XRD analysis showed that the formation of CaZrO3 was at the calcinations temperature of 1400°C. The average diameter of CaZrO3 with 4 mol% doped-Eu3+ was 2µm. The PL spectra demonstrated that CaZrO3:Eu3+ phosphor could be excited effectively in the near ultraviolet light region (397 nm) and emitted strong red-emission lines at 616 nm corresponding to the forced electric dipole 5 D 0 → 7 F 2 transitions of Eu3+. Meanwhile, the light-emitting diode was fabricated with the Ca0.96ZrO3:Eu0.043+ phosphor, which can efficiently absorb ∼ 400 nm irradiation and emit red light. Therefore Ca0.96ZrO3:Eu0.043+ may have applications for a near ultraviolet InGaN chip-based white light-emitting diode.

Near-ultraviolet chip-based phosphor-converted solar-spectrum white light-emitting diode

2020 ◽  
Vol 59 (01) ◽  
pp. 1
Author(s):  
Xinran Zhang ◽  
Shuo Zhang ◽  
Guodong Wang ◽  
Yunyu Wang ◽  
Meng Liang ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Solar Spectrum ◽  
Light Emitting ◽  
Near Ultraviolet

Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

2018 ◽  
Vol 12 (04) ◽  
pp. 1 ◽  
Author(s):  
Zengcheng Li ◽  
Legong Liu ◽  
Yingnan Huang ◽  
Meixin Feng ◽  
Jianxun Liu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Carbon Incorporation ◽  
Light Emitting ◽  
Near Ultraviolet

High CRI in phosphor-in-doped glass under near-ultraviolet excitation for warm white light-emitting diode

2021 ◽  
Vol 229 ◽  
pp. 117684
Author(s):  
A. Arellano-Morales ◽  
J. Molina-González ◽  
H. Desirena ◽  
J.M. Bujdud-Perez ◽  
S. Calixto
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Ultraviolet Excitation ◽  
Near Ultraviolet ◽  
Warm White Light ◽  
Doped Glass

White Light from an Indium Zinc Oxide/Porous Silicon Light-Emitting Diode

2008 ◽  
Vol 113 (2) ◽  
pp. 751-754 ◽  
Author(s):  
Guangxia Hu ◽  
Shi Qiang Li ◽  
Hao Gong ◽  
Yanlin Zhao ◽  
Jixuan Zhang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
White Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Indium Zinc Oxide

Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

2007 ◽  
Vol 124-126 ◽  
pp. 499-502 ◽  
Author(s):  
Kyoung Jae Choi ◽  
Joung Kyu Park ◽  
Kyung Nam Kim ◽  
Chang Hae Kim ◽  
Ho Kun Kim
Keyword(s):  
White Light ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Forward Bias ◽  
Color Temperature ◽  
Operating Voltage ◽  
Current Increase ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Yellow Region

We have synthesized a Eu2+-activated Sr3MgSi2O8 blue phosphor and (Sr,Ba)2SiO4 yellow phosphor. We fabricated a phosphor-conversion white light emitting diode(LED) using an InGaN chip that emits 400 nm near-ultraviolet(n-UV) light and phosphors that emit in the blue and yellow region. When the white LED was operated at a forward-bias current of 20 mA at room temperature(RT), the color temperature(Tcp), average color rendering(Ra), operating voltage(Vf) and luminous efficacy(ηL) were estimated to be 5800K, 72.08, 3.4V, and 7.61 lm/W, respectively. The commission International de I’Eclarirage(CIE) chromaticity coordinates obtained from the measured spectra remained almost constant during the forward-baias current increase from 0.5 mA to 60 mA.

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