A new field‐effect transistor based on the metal–insulator transition

Kozo Katayama; Digh Hisamoto; Yoshitaka Nakamura; Nobuyoshi Kobayashi; Ryo Nagai

doi:10.1063/1.361120

A new field‐effect transistor based on the metal–insulator transition

Journal of Applied Physics ◽

10.1063/1.361120 ◽

1996 ◽

Vol 79 (5) ◽

pp. 2542-2548

Author(s):

Kozo Katayama ◽

Digh Hisamoto ◽

Yoshitaka Nakamura ◽

Nobuyoshi Kobayashi ◽

Ryo Nagai

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Effect Transistor

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Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

Applied Physics Letters ◽

10.1063/1.1632028 ◽

2003 ◽

Vol 83 (23) ◽

pp. 4860-4862 ◽

Cited By ~ 71

Author(s):

Teruo Kanki ◽

Young-Geun Park ◽

Hidekazu Tanaka ◽

Tomoji Kawai

Keyword(s):

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Electrical Field ◽

Metal Insulator ◽

Field Control ◽

Effect Transistor

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Metal-insulator Transition Field Effect Transistor Observed by 4-probe Lamination Contact Electrode

10.7567/ssdm.2019.ps-7-01 ◽

2019 ◽

Author(s):

M. Sakai ◽

Y. Okada ◽

T. Ueda ◽

T. Sano ◽

R. Takeda ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Effect Transistor ◽

Transition Field ◽

Contact Electrode

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Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b18745 ◽

2019 ◽

Vol 11 (3) ◽

pp. 3224-3230 ◽

Cited By ~ 6

Author(s):

Mahito Yamamoto ◽

Ryo Nouchi ◽

Teruo Kanki ◽

Azusa N. Hattori ◽

Kenji Watanabe ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Monolithically Integrated ◽

Effect Transistor

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Voltage-Induced Metal-Insulator Transition in Polythiophene Field-Effect Transistors

Physical Review Letters ◽

10.1103/physrevlett.96.246403 ◽

2006 ◽

Vol 96 (24) ◽

Cited By ~ 69

Author(s):

A. S. Dhoot ◽

G. M. Wang ◽

D. Moses ◽

A. J. Heeger

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3186615 ◽

2009 ◽

Vol 27 (5) ◽

pp. 2079 ◽

Cited By ~ 10

Author(s):

E. Cho ◽

S. Seo ◽

C. Jin ◽

D. Pavlidis ◽

G. Fu ◽

...

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Field Effect ◽

Field Effect Transistor ◽

Electrical And Optical Properties ◽

Metal Insulator ◽

Organic Vapor ◽

Metal Organic ◽

Effect Transistor

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The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films ◽

10.1016/s0040-6090(99)01081-0 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 256-260 ◽

Cited By ~ 39

Author(s):

Wenping Hu ◽

Yunqi Liu ◽

Yu Xu ◽

Shenggao Liu ◽

Shuqin Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gas Sensitivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films ◽

Effect Transistor

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TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab81b3 ◽

2020 ◽

Vol 35 (6) ◽

pp. 065012

Author(s):

Xin-Xing Fei ◽

Ying Wang ◽

Xin Luo ◽

Meng-Tian Bao ◽

Cheng-Hao Yu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

Tcad Simulation ◽

Double Channel

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Electric-field induced ion-leveraged metal–insulator transition in conducting polymer-based field effect devices

Current Applied Physics ◽

10.1016/s1567-1739(02)00107-4 ◽

2002 ◽

Vol 2 (4) ◽

pp. 339-343 ◽

Cited By ~ 27

Author(s):

Arthur J Epstein ◽

Fang-Chi Hsu ◽

Nan-Rong Chiou ◽

Vladimir N Prigodin

Keyword(s):

Electric Field ◽

Conducting Polymer ◽

Field Effect ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Field Effect Devices

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Cited By ~ 29

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/12/309 ◽

2001 ◽

Vol 16 (12) ◽

pp. 997-1001 ◽

Cited By ~ 23

Author(s):

Kun-Wei Lin ◽

Chin-Chuan Cheng ◽

Shiou-Ying Cheng ◽

Kuo-Hui Yu ◽

Chih-Kai Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Sensor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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