scholarly journals Hall effect and ionized impurity scattering in Si(1−x)Gex

2003 ◽  
Vol 94 (11) ◽  
pp. 7159-7162
Author(s):  
P. Kinsler ◽  
W. Th. Wenckebach
Keyword(s):  
Hall Effect ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering

Ionized Impurity Scattering in Degenerate Many-Valley Semiconductors

1964 ◽  
Vol 135 (3A) ◽  
pp. A779-A784 ◽  
Author(s):  
John E. Robinson ◽  
Sergio Rodriguez
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering

Quantum oscillations of the hall effect of a fermion gas with random impurity scattering

1971 ◽  
Vol 9 (1) ◽  
pp. iii
Author(s):  
A. Bastin ◽  
C. Lewiner ◽  
O. Betbeder-Matibet ◽  
P. Nozieres
Keyword(s):  
Hall Effect ◽  
Impurity Scattering ◽  
Quantum Oscillations ◽  
Fermion Gas

Ionized impurity scattering in semimetals

1980 ◽  
Vol 22 (8) ◽  
pp. 3935-3938 ◽  
Author(s):  
R. Resta ◽  
L. Resca
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering

scholarly journals Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 124 ◽  
Author(s):  
Toufik Sadi ◽  
Cristina Medina-Bailon ◽  
Mihail Nedjalkov ◽  
Jaehyun Lee ◽  
Oves Badami ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Small Diameter ◽  
Golden Rule ◽  
Impurity Scattering ◽  
Boltzmann Transport ◽  
Nanowire Transistors ◽  
Scattering Mechanisms ◽  
Relaxation Time Approximation ◽  
Ionized Impurity Scattering ◽  
The Impact

Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ physics and operation, and unlock the devices’ technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo–Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi’s Golden rule. In this paper, we couple multi-slice Poisson–Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes.

INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN EFFECT AND IMPACT IONIZATION IN CdTe

1968 ◽  
Vol 12 (3) ◽  
pp. 81-83 ◽  
Author(s):  
Gerald S. Picus ◽  
Donald F. DuBois ◽  
Lynette B. Van Atta
Keyword(s):  
Impact Ionization ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering ◽  
Gunn Effect
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