Photo-Hall-effect measurements of ionized impurity scattering in GaAs

1978 ◽  
Vol 17 (6) ◽  
pp. 2625-2630 ◽  
Author(s):  
M. A. Paesler ◽  
H. J. Queisser
Keyword(s):  
Hall Effect ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering ◽  
Hall Effect Measurements

scholarly journals Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Open Physics ◽  
2012 ◽  
Vol 10 (2) ◽  
Author(s):  
Ozlem Celik ◽  
Engin Tiras ◽  
Sukru Ardali ◽  
Sefer Lisesivdin ◽  
Ekmel Ozbay
Keyword(s):  
Raman Spectroscopy ◽  
Hall Effect ◽  
Optical Phonon ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Polar Optical Phonon ◽  
Optical Phonon Scattering ◽  
Hall Effect Measurements

AbstractThe longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.

scholarly journals Hall effect and ionized impurity scattering in Si(1−x)Gex

2003 ◽  
Vol 94 (11) ◽  
pp. 7159-7162
Author(s):  
P. Kinsler ◽  
W. Th. Wenckebach
Keyword(s):  
Hall Effect ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Ionized Impurity Scattering in Degenerate Many-Valley Semiconductors

1964 ◽  
Vol 135 (3A) ◽  
pp. A779-A784 ◽  
Author(s):  
John E. Robinson ◽  
Sergio Rodriguez
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering

Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements

2015 ◽  
Vol 212 (7) ◽  
pp. 1487-1493 ◽  
Author(s):  
Woong-Jhae Lee ◽  
Hyung Joon Kim ◽  
Egon Sohn ◽  
Hoon Min Kim ◽  
Tai Hoon Kim ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Hall Effect ◽  
Oxygen Diffusion ◽  
Time Dependent ◽  
Hall Effect Measurements
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