Electrical Activation Processes in Ion Implanted SiC Device Structures

2003 ◽  
Author(s):  
K. A. Jones
Keyword(s):  
Electrical Activation ◽  
Device Structures ◽  
Ion Implanted

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

1993 ◽  
Vol 63 (8) ◽  
pp. 1125-1127 ◽  
Author(s):  
N. Yu ◽  
K. B. Ma ◽  
C. Kirschbaum ◽  
K. Varahramyan ◽  
W. K. Chu
Keyword(s):  
Thermal Annealing ◽  
Electrical Activation ◽  
Ion Implanted

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Boron electrical activation in dual B + + N + and B + + Ar + ion-implanted silicon

1996 ◽  
Vol 62 (4) ◽  
pp. 355-358
Author(s):  
V. B. Odzhaev ◽  
V. N. Popok ◽  
V. S. Prosolovich ◽  
V. Hnatowicz
Keyword(s):  
Electrical Activation ◽  
Ion Implanted

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

1999 ◽  
Vol 59 (4) ◽  
pp. 2986-2994 ◽  
Author(s):  
G. Vitali ◽  
C. Pizzuto ◽  
G. Zollo ◽  
D. Karpuzov ◽  
M. Kalitzova ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Ion Implanted

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

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