scholarly journals Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer

2003 ◽  
Vol 83 (14) ◽  
pp. 2784-2786 ◽  
Author(s):  
A. Tsukazaki ◽  
A. Ohtomo ◽  
S. Yoshida ◽  
M. Kawasaki ◽  
C. H. Chia ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Optical Quality ◽  
Layer Growth ◽  
Layer By Layer ◽  
Zno Film ◽  
High Optical Quality ◽  
Zno Buffer Layer

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Effect of the thickness of the ZnO buffer layer on the properties of electrodeposited p-Cu2O/n-ZnO/n-AZO heterojunctions

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68663-68674 ◽  
Author(s):  
Halla Lahmar ◽  
Amor Azizi ◽  
Guy Schmerber ◽  
Aziz Dinia
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Zno Film ◽  
Heterojunction Solar Cells ◽  
Transparent Conducting ◽  
Azo Thin Film ◽  
Doped Zno ◽  
Zno Buffer Layer

Transparent conducting Cu2O/non-doped ZnO/Al-doped ZnO/FTO heterojunction solar cells were fabricated by a three-step electrodeposition; with non-doped ZnO film as a buffer layer between-AZO thin film and p-Cu2O nanostructure.

Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

1992 ◽  
Vol 275 ◽  
Author(s):  
K. Yoshikawa ◽  
N. Sasaki
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Growth Interruption ◽  
Layer Deposition ◽  
Unit Cells ◽  
Layered Growth

ABSTRACTUsing in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.

Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer

2000 ◽  
Vol 76 (5) ◽  
pp. 559-561 ◽  
Author(s):  
Yefan Chen ◽  
Hang-Ju Ko ◽  
Soon-Ku Hong ◽  
Takafumi Yao
Keyword(s):  
Buffer Layer ◽  
Layer Growth ◽  
Layer By Layer

scholarly journals Property Improvement of Transparent Conducting Al-doped ZnO Film by ZnO Buffer Layer Deposited on Polymer Substrates

2009 ◽  
Vol 52 (3) ◽  
pp. 153-155 ◽  
Author(s):  
Yuki UENO ◽  
Naoya ICHII ◽  
Toshimichi KAMINISHI ◽  
Takanori AOKI ◽  
Akio SUZUKI ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Zno Film ◽  
Polymer Substrates ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Zno Buffer Layer

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

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