Thermal pretreatment of sapphire substrates prior to ZnO buffer layer growth

2013 ◽  
Vol 31 (5) ◽  
pp. 051203 ◽  
Author(s):  
Shimin Huang ◽  
Shulin Gu ◽  
Shunming Zhu ◽  
Ran Gu ◽  
Kun Tang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Growth ◽  
Thermal Pretreatment ◽  
Sapphire Substrates ◽  
Zno Buffer Layer

Epitaxial GaN Layer Growth Using Nitrogen Enriched TiN Buffer Layers

2006 ◽  
Vol 916 ◽  
Author(s):  
Kazuhiro Ito ◽  
Yu Uchida ◽  
Sang-jin Lee ◽  
Susumu Tsukimoto ◽  
Yuhei Ikemoto ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Light Emission ◽  
Chemical Vapor ◽  
Nucleation Site ◽  
Layer Growth ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Nitrogen Enrichment ◽  
Threading Dislocation ◽  
Sapphire Substrates

AbstractAbout 20 years ago, the discovery of an AlN buffer layer lead to the breakthrough in epitaxial growth of GaN layers with mirror-like surface, using a metal organic chemical vapor deposition (MOCVD) technique on sapphire substrates. Since then, extensive efforts have been continued to develop a conductive buffer layer/substrate for MOCVD-grown GaN layers to improve light emission of GaN light-emitting diodes. In the present study, we produced MOCVD-grown, continuous, flat epitaxial GaN layers on nitrogen enriched TiN buffer layers with the upper limit of the nitrogen content of TiN deposited at room temperature (RT) on sapphire substrates. It was concluded that the nitrogen enrichment would reduce significantly the TiN/GaN interfacial energy. The RT deposition of the TiN buffer layers suppresses their grain growth during the nitrogen enrichment and the grain size refining must increase nucleation site of GaN. In addition, threading dislocation density in the GaN layers grown on TiN was much lower than that in the GaN layers grown on AlN.

scholarly journals Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer

2003 ◽  
Vol 83 (14) ◽  
pp. 2784-2786 ◽  
Author(s):  
A. Tsukazaki ◽  
A. Ohtomo ◽  
S. Yoshida ◽  
M. Kawasaki ◽  
C. H. Chia ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Optical Quality ◽  
Layer Growth ◽  
Layer By Layer ◽  
Zno Film ◽  
High Optical Quality ◽  
Zno Buffer Layer

scholarly journals MOCVD Grown HgCdTe Heterostructures for Medium Wave Infrared Detectors

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 611
Author(s):  
Waldemar Gawron ◽  
Jan Sobieski ◽  
Tetiana Manyk ◽  
Małgorzata Kopytko ◽  
Paweł Madejczyk ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Infrared Detectors ◽  
Lattice Mismatch ◽  
Layer Growth ◽  
Ex Situ ◽  
Current Status ◽  
Organic Chemical ◽  
Infrared Band ◽  
Donor And Acceptor ◽  
Wide Range

This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology’s Institute of Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for the deposition of HgCdTe epilayers, with a wide range of compositions, used for uncooled infrared detectors. Good compositional and thickness uniformity was achieved on epilayers grown on 2-in-diameter, low-cost (100) GaAs wafers. Most growth was performed on substrates, which were misoriented from (100) by between 2° and 4° in order to minimize growth defects. The large lattice mismatch between GaAs and HgCdTe required the usage of a CdTe buffer layer. The CdTe (111) B buffer layer growth was enforced by suitable nucleation procedure, based on (100) GaAs substrate annealing in a Te-rich atmosphere prior to the buffer deposition. Secondary-ion mass spectrometry (SIMS) showed that ethyl iodide (EI) and tris(dimethylamino)arsenic (TDMAAs) were stable donor and acceptor dopants, respectively. Fully doped (111) HgCdTe heterostructures were grown in order to investigate the devices’ performance in the 3–5 µm infrared band. The uniqueness of the presented technology manifests in a lack of the necessity of time-consuming and troublesome ex situ annealing.

Improvement of Resistive Switching Performances in ZnLaO Film by Embedding a Thin ZnO Buffer Layer

2013 ◽  
Vol 2 (9) ◽  
pp. Q69-Q71 ◽  
Author(s):  
D. Xu ◽  
Y. Xiong ◽  
M. Tang ◽  
B. Zeng ◽  
Y. Xiao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Resistive Switching ◽  
Zno Buffer Layer

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

2009 ◽  
Vol 311 (12) ◽  
pp. 3278-3284 ◽  
Author(s):  
A. Le Louarn ◽  
S. Vézian ◽  
F. Semond ◽  
J. Massies
Keyword(s):  
Buffer Layer ◽  
Layer Growth ◽  
Aln Buffer

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth

2007 ◽  
Vol 90 (5) ◽  
pp. 053112 ◽  
Author(s):  
C. B. Soh ◽  
H. Hartono ◽  
S. Y. Chow ◽  
S. J. Chua ◽  
E. A. Fitzgerald
Keyword(s):  
Buffer Layer ◽  
Layer Growth ◽  
Dislocation Annihilation
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