Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate

2003 ◽  
Vol 83 (7) ◽  
pp. 1403-1405 ◽  
Author(s):  
Chihoon Lee ◽  
Jihoon Choi ◽  
Moonju Cho ◽  
Jaehoo Park ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
Electrical Characteristics ◽  
High K ◽  
Penetration Behavior ◽  
Al2o3 Films ◽  
High K Gate Dielectric

Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

2004 ◽  
Vol 84 (15) ◽  
pp. 2868-2870 ◽  
Author(s):  
Chihoon Lee ◽  
Jihoon Choi ◽  
Moonju Cho ◽  
Doo Seok Jeong ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
High K ◽  
Doping Effects ◽  
Al2o3 Films ◽  
High K Gate Dielectric

Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

2018 ◽  
Author(s):  
S.H. Hsu ◽  
K.S. Chang-Liao ◽  
Y.L. Li ◽  
C.H. Huang ◽  
D.B. Ruan ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
High K ◽  
High K Gate Dielectric

Effects of Plasma Nitrided Trilayer High-k Gate Dielectric on Electrical Characteristics of FinFET

2019 ◽  
Author(s):  
K.-Y. Lai ◽  
K.-S. Chang-Liao ◽  
Y.-L. Li ◽  
D.-B. Ruan ◽  
S.-H. Hsu ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
High K ◽  
High K Gate Dielectric
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