Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

2004 ◽  
Vol 84 (15) ◽  
pp. 2868-2870 ◽  
Author(s):  
Chihoon Lee ◽  
Jihoon Choi ◽  
Moonju Cho ◽  
Doo Seok Jeong ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
High K ◽  
Doping Effects ◽  
Al2o3 Films ◽  
High K Gate Dielectric

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric
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