Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

2006 ◽  
Vol 9 (6) ◽  
pp. 940-944 ◽  
Author(s):  
K.K.S. Curreem ◽  
P.F. Lee ◽  
J.Y. Dai
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Characteristics ◽  
High K ◽  
Strained Sige ◽  
High K Gate Dielectric

Structural and Optical Properties of VO2 Film Grown on Sapphire Substrate by Pulsed Laser Deposition

2014 ◽  
Vol 912-914 ◽  
pp. 325-328 ◽  
Author(s):  
Ji Ming Bian ◽  
Li Hua Miao ◽  
Shu Kuo Zhao
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Optical Transmission ◽  
Pulsed Laser ◽  
Blue Emission ◽  
Laser Deposition ◽  
Structural And Optical Properties

VO2films were grown on sapphire substrates by pulsed laser deposition (PLD), and the structural and optical properties of as-grown films were investigated by X-ray diffraction (XRD), field effect scanning electron microscopy (FESEM), photoluminescence (PL), and optical-transmission measurements. The oxygen partial pressure in the growth chamber was found to be the key factor deciding the microstructure and properties of as-deposited VO2films, and its effects and corresponding mechanism were investigated systemically. Results indicated that dense and uniform VO2films with smooth surface were achieved by PLD under optimized oxygen partial pressure. Strong blue emission peaks were observed in room temperature photoluminescence (PL) spectra. Excellent selective optical-transmission of the VO2thin films from 200~3000 nm were also recorded at room temperature.

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Effect of oxygen partial pressure on the Fermi level of ZnO1−x films fabricated by pulsed laser deposition

2010 ◽  
Vol 96 (20) ◽  
pp. 201907 ◽  
Author(s):  
Chul-Hee Min ◽  
Suyeon Cho ◽  
Seung-Hyuk Lee ◽  
Deok-Yong Cho ◽  
Won Goo Park ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Fermi Level ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen
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