scholarly journals Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

2003 ◽  
Vol 83 (6) ◽  
pp. 1163-1165 ◽  
Author(s):  
M. C. Rogge ◽  
C. Fühner ◽  
U. F. Keyser ◽  
R. J. Haug ◽  
M. Bichler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Atomic Force Microscope ◽  
Electron Beam Lithography ◽  
Atomic Force ◽  
Variable Coupling

scholarly journals Grating Metamaterials Based on CdTe/CdMgTe Quantum Wells as Terahertz Detectors for High Magnetic Field Applications

2020 ◽  
Vol 10 (8) ◽  
pp. 2807
Author(s):  
Dmitriy Yavorskiy ◽  
Maria Szoła ◽  
Krzysztof Karpierz ◽  
Rafał Bożek ◽  
Rafał Rudniewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Beam ◽  
Quantum Well ◽  
Quantum Wells ◽  
Atomic Force Microscope ◽  
High Magnetic Field ◽  
White Light ◽  
Electron Beam Lithography ◽  
Terahertz Detectors ◽  
Atomic Force

The cyclotron and magnetoplasmon resonances were studied at 2 K in grating metamaterials fabricated on wafers with one or two modulation doped CdTe/CdMgTe quantum wells. The gratings (with the period varied between 2 μ m and 8 μ m) were prepared with an electron beam lithography either by etching or by evaporation of Au. The gratings were studied with an atomic force microscope which revealed a correlation between the depth and width of etched grooves at a constant time of etching. The sharpest resonances observed are due to excitation of magnetoplasmon in the case of Au gratings on a wafer with one quantum well. Etched samples with two quantum wells showed the strongest tuneability of magnetoplasmon resonances with the period of the grating and illumination with white light. We showed that the samples studied can be used as resonant or quasi-resonant terahertz detectors tuneable with magnetic field and white light.

Transport in Thermal Dip Pen Nanolithography

2004 ◽  
Author(s):  
Brent A. Nelson ◽  
Tanya L. Wright ◽  
William P. King ◽  
Paul E. Sheehan ◽  
Lloyd J. Whitman
Keyword(s):  
Electron Beam ◽  
Atomic Force Microscope ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Optical Lithography ◽  
Ambient Conditions ◽  
Atomic Force ◽  
Resolution Limits ◽  
Dip Pen Nanolithography

The manufacture of nanoscale devices is at present constrained by the resolution limits of optical lithography and the high cost of electron beam lithography. Furthermore, traditional silicon fabrication techniques are quite limited in materials compatibility and are not well-suited for the manufacture of organic and biological devices. One nanomanufacturing technique that could overcome these drawbacks is dip pen nanolithography (DPN), in which a chemical-coated atomic force microscope (AFM) tip deposits molecular ‘inks’ onto a substrate [1]. DPN has shown resolution as good as 5 nm [2] and has been performed with a large number of molecules, but has limitations. For molecules to ink the surface they must be mobile at room temperature, limiting the inks that can be used, and since the inks must be mobile in ambient conditions, there is no way to stop the deposition while the tip is in contact with the substrate. In-situ imaging of deposited molecules therefore causes contamination of the deposited features.

Advancement in fabrication of carbon nanotube tip for atomic force microscope using multi-axis nanomanipulator in scanning electron microscope

2022 ◽  
Author(s):  
Sanjeev Kumar Kanth ◽  
Anjli Sharma ◽  
Byong Chon Park ◽  
Woon Song ◽  
Hyun Rhu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Carbon Nanotube ◽  
Scanning Electron Microscope ◽  
Atomic Force Microscope ◽  
Structural Integrity ◽  
Ion Beam ◽  
Rectilinear Motion ◽  
Atomic Force ◽  
Scanning Electron

Abstract We have constructed a new nanomanipulator (NM) in a field emission scanning electron microscope (FE-SEM) to fabricate carbon nanotube (CNT) tip to precisely adjust the length and attachment angle of CNT onto the mother atomic force microscope (AFM) tip. The new NM is composed of 2 modules, each of which has the degree of freedom of three-dimensional rectilinear motion x, y and z and one-dimensional rotational motion θ. The NM is mounted on the stage of a FE-SEM. With the system of 14 axes in total which includes 5 axes of FE-SEM and 9 axes of nano-actuators, it was possible to see CNT tip from both rear and side view about the mother tip. With the help of new NM, the attachment angle error could be reduced down to 0º as seen from both the side and the rear view, as well as, the length of the CNT could be adjusted with the precision using electron beam induced etching. For the proper attachment of CNT on the mother tip surface, the side of the mother tip was milled with focused ion beam. In addition, electron beam induced deposition was used to strengthen the adhesion between CNT and the mother tip. In order to check the structural integrity of fabricated CNT, transmission electron microscope image was taken which showed the fine cutting of CNT and the clean surface as well. Finally, the performance of the fabricated CNT tip was demonstrated by imaging 1-D grating and DNA samples with atomic force microscope in tapping mode.

scholarly journals Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11306-11316
Author(s):  
Christian D. Dieleman ◽  
Weiyi Ding ◽  
Lianjia Wu ◽  
Neha Thakur ◽  
Ivan Bespalov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Luminescent Properties ◽  
Colloidal Quantum Dots ◽  
Direct Patterning ◽  
One Step ◽  
Patterning Technique

A general, one-step patterning technique for colloidal quantum dots by direct optical or e-beam lithography. Photons (5.5–91.9 eV) and electrons (3 eV–50 kV) crosslink and immobilize QDs down to tens of nm while preserving the luminescent properties.

Fabrication and Luminescence of Etched Quantum Rings and Vertically Coupled Dots

1995 ◽  
Vol 406 ◽  
Author(s):  
G. E. Philippa ◽  
J. A. Mejia Galeana ◽  
C. Cassou ◽  
P. D. Wang ◽  
C. Guasch ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electric Field ◽  
Emission Spectrum ◽  
Electron Beam Lithography ◽  
Electrical Contacts ◽  
Outer Diameter ◽  
Quantum Rings ◽  
Order Of Magnitude ◽  
Linewidth Broadening

AbstractThe fabrication of GaAs-GaAIAs coupled quantum dots and of quantum rings using electron beam lithography and dry etching is described. Coupled dots of physical diameter of 500 and 250 nm were fabricated and processed with top electrical contacts to apply an electric field. We show that the emission spectrum of coupled dots is modified by the electric field. Quantum rings of 400 nm outer diameter and wall thickness of 25 nm were fabricated. The emission spectrum from rings showed the quantum well emission shifted to higher energies and although its intensity decreased by about one order of magnitude there was little linewidth broadening.

Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

2000 ◽  
Vol 77 (16) ◽  
pp. 2607-2609 ◽  
Author(s):  
C. K. Hyon ◽  
S. C. Choi ◽  
S.-H. Song ◽  
S. W. Hwang ◽  
M. H. Son ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscope ◽  
Inas Quantum Dots ◽  
Direct Patterning ◽  
Atomic Force

Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray

2007 ◽  
Vol 7 (2) ◽  
pp. 410-417 ◽  
Author(s):  
Guo-Jun Zhang ◽  
Takashi Tanii ◽  
Yuzo Kanari ◽  
Iwao Ohdomari
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Specificity ◽  
Nonspecific Binding ◽  
Self Assembled Monolayer ◽  
Incubation Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-IgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity.

Sign in / Sign up

Export Citation Format

Share Document