Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

2000 ◽  
Vol 77 (16) ◽  
pp. 2607-2609 ◽  
Author(s):  
C. K. Hyon ◽  
S. C. Choi ◽  
S.-H. Song ◽  
S. W. Hwang ◽  
M. H. Son ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscope ◽  
Inas Quantum Dots ◽  
Direct Patterning ◽  
Atomic Force

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

2003 ◽  
Vol 794 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Good Growth ◽  
Excitation Power Density ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Layer Deposition

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

Direct patterning of zinc oxide with control of reflected color through nano-oxidation using an atomic force microscope

2009 ◽  
Vol 20 (5) ◽  
pp. 055302 ◽  
Author(s):  
Jih-Shang Hwang ◽  
Li-Wei Chen ◽  
Te-Chang Chen ◽  
Chi-Wen Kuo ◽  
Zhan-Shuo Hu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Force Microscope ◽  
Direct Patterning ◽  
Atomic Force

Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal

2002 ◽  
Vol 28 (2) ◽  
pp. 139-141
Author(s):  
V. P. Evtikhiev ◽  
O. V. Konstantinov ◽  
E. Yu. Kotel’nikov ◽  
A. V. Matveentsev ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vicinal Surface ◽  
Gaas Crystal ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Исследование структурных и люминесцентных свойств гетероструктур InAs/GaAs с легированными Bi потенциальными барьерами

2018 ◽  
Vol 52 (6) ◽  
pp. 581
Author(s):  
А.С. Пащенко ◽  
Л.С. Лунин ◽  
С.Н. Чеботарев ◽  
М.Л. Лунина
Keyword(s):  
Quantum Dots ◽  
Emission Peak ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Potential Barriers ◽  
Atomic Force ◽  
Gaas Barrier ◽  
Gaas Quantum Dot ◽  
Crystal Lattice Parameters

AbstractThe influence of Bi in GaAs barrier layers on the structural and optical properties of InAs/GaAs quantum-dot heterostructures is studied. By atomic-force microscopy and Raman spectroscopy, it is established that the introduction of Bi into GaAs to a content of up to 5 at % results in a decrease in the density of InAs quantum dots from 1.58 × 10^10 to 0.93 × 10^10 cm^–2. The effect is defined by a decrease in the mismatch between the crystal-lattice parameters at the InAs/GaAsBi heterointerface. In this case, an increase in the height of InAs quantum dots is detected. This increase is apparently due to intensification of the surface diffusion of In during growth at the GaAsBi surface. Analysis of the luminescence properties shows that the doping of GaAs potential barriers with Bi is accompanied by a red shift of the emission peak related to InAs quantum dots and by a decrease in the width of this peak.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Site-Control Technology for InAs Quantum Dot Formation by Direct Deposition of Indium Nano-Dots with a Nano-Jet Probe

2003 ◽  
Vol 794 ◽  
Author(s):  
Shunsuke Ohkouchi ◽  
Yusui Nakamura ◽  
Hitoshi Nakamura ◽  
Kiyoshi Asakawa
Keyword(s):  
Quantum Dots ◽  
Gaas Substrate ◽  
Control Technology ◽  
Two Dimensional ◽  
Inas Quantum Dots ◽  
Atomic Force ◽  
Micron Size ◽  
Afm Probe ◽  
Inas Quantum Dot ◽  
Site Control

ABSTRACTWe propose a new nano-probe-assisted technique which enables the formation of site-controlled InAs quantum dots (QDs). High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated by using a specially designed atomic-force-microscope (AFM) probe (the Nano-Jet Probe). This developed probe has a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. By applying a voltage pulse between the pyramidal tip and the sample, In clusters were extracted from the reservoir tank within the stylus through the aperture, resulting in the In nano-dot formation. These In nano-dots can be directly converted to InAs QD arrays by subsequent irradiation of arsenic flux.

Direct fabrication of parallel quantum dots with an atomic force microscope

2002 ◽  
Vol 13 (2-4) ◽  
pp. 1155-1158 ◽  
Author(s):  
U.F Keyser ◽  
M Paesler ◽  
U Zeitler ◽  
R.J Haug ◽  
K Eberl
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscope ◽  
Atomic Force ◽  
Direct Fabrication
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