scholarly journals Diamond deposition on modified silicon substrates: Making diamond atomic force microscopy tips for nanofriction experiments

2003 ◽  
Vol 94 (3) ◽  
pp. 1699-1704 ◽  
Author(s):  
G. Tanasa ◽  
O. Kurnosikov ◽  
C. F. J. Flipse ◽  
J. G. Buijnsters ◽  
W. J. P. van Enckevort
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Substrates ◽  
Diamond Deposition ◽  
Force Microscopy ◽  
Atomic Force

Pretreatment of silicon substrates for CVD diamond deposition studied by atomic force microscopy

1995 ◽  
Vol 84 (2) ◽  
pp. 133-143 ◽  
Author(s):  
Gernot Friedbacher ◽  
Eric Bouveresse ◽  
Gernot Fuchs ◽  
Manfred Grasserbauer ◽  
Daniel Schwarzbach ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Cvd Diamond ◽  
Silicon Substrates ◽  
Diamond Deposition ◽  
Force Microscopy ◽  
Atomic Force

Self-Assembled TPPS4 Nanostructures Revealed by Atomic Force Microscopy

2004 ◽  
Vol 97-98 ◽  
pp. 191-194 ◽  
Author(s):  
R. Augulis ◽  
Valentinas Snitka ◽  
R. Rotomskis
Keyword(s):  
Atomic Force Microscopy ◽  
Spatial Structure ◽  
Water Soluble ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Mean ◽  
J Aggregates ◽  
Self Assembled ◽  
Experimental Findings

Meso-tetra (4-sulfonatophenyl) porphine (TPPS4) is water-soluble tetrapyrrolic dye, which forms self assembled nanostructures – J-aggregates under appropriate conditions. It was shown, that such aggregates survive dried on the substrate. The spatial structure of TPPS4 Jaggregates formed in acidic aqueous solutions and dispersed on silicon substrates was analyzed by means of atomic force microscopy (AFM). The stripe-like structures were observed. The size of individual stripes ranged 4,5×40×(200-1000) nm (H×W×L). The width and height was almost the same for all stripes and independent upon the concentration of the solution, however the length was statistically distributed and the mean length increased with increasing concentration of initial TPPS4 solution. At higher concentrations such stripes stacked into thicker fibers containing 2-20 stripes. Such fibers branched and formed large bush-like structures sized up to several millimeters. According to experimental findings the model of mesostructures, formed by TPPS4 J-aggregates, was proposed.

Formation of Self-Assembled Nanometer-Scale InP Islands on Silicon Substrates

2000 ◽  
Vol 618 ◽  
Author(s):  
A.S. Bakin ◽  
D. Piester ◽  
H.-H. Wehmann ◽  
A.A. Ivanov ◽  
A. Schlachetzki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vapor Phase ◽  
Three Dimensional ◽  
Nanometer Scale ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic

ABSTRACTThree-dimensional islands of InP have been reproducibly grown in the Stranski-Krastanow growth mode on Si (001) and (111) by using metal-organic vapor phase epitaxy in order to obtain nanometer-scale quantum dots. Atomic-force microscopy was used to determine the morphology of the samples and to evaluate the dimensions of the islands. Formation of three-dimensional islands with densities as high as 2.5×1010 cm−2 and small sizes have been observed. The evolution of island morphology is explained in terms of strain-relaxing mechanisms at the first stages of InP/Si heteroepitaxy.

scholarly journals Atomic force microscopy analysis of alkali textured silicon substrates for solar cell applications

2018 ◽  
Vol 6 (1) ◽  
pp. 13
Author(s):  
Adebayo Fashina ◽  
Kenneth Adama ◽  
Lookman Abdullah ◽  
Chukwuemeka Ani ◽  
Oluwaseun Oyewole ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Light Trapping ◽  
Surface Texturing ◽  
Etching Time ◽  
Silicon Substrates ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis

In this paper, the surface morphology of textured silicon substrates is explored. Prior to the surface morphology analysis, textured silicon substrates were obtained by KOH anisotropic texturing of polished silicon wafers. This was achieved by investigating of the dependence surface texturing on the process parameters; etchant concentration, etching time and temperature. The surface morphology of the textured silicon samples was obtained using atomic force microscopy that was operated in the tapping mode. The resulting atomic force microscopy (AFM) images were analyzed using the Nanoscope and Gwyddion software packages. The AFM analysis revealed more surface details such as the depth, roughness, section, and step height analysis. The analysis was limited to a length scale of a few micrometers, which carefully reveals the number of individualities of the initial stages of pyramid growth. The average roughness was found to be 593nm for an optimally textured silicon wafer. The implications of the study are then discussed for potential light trapping application in silicon solar cells.

The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy

2002 ◽  
Vol 235 (1-4) ◽  
pp. 411-414 ◽  
Author(s):  
Zhuo Wang ◽  
Daliang Sun ◽  
Jifan Hu ◽  
Deliang Cui ◽  
Xiaohong Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Reactive Ion Etching ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Force Microscopy ◽  
Atomic Force

Effects of Substrate Bias on the Nucleation of Diamond Films Studied by Atomic Force Microscopy

1995 ◽  
Vol 416 ◽  
Author(s):  
G. Sánchez ◽  
M. C. Polo ◽  
W. L. Wang ◽  
J. Esteve
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Substrate Bias ◽  
Applied Bias ◽  
Force Microscopy ◽  
Nucleation Stage ◽  
Atomic Force ◽  
Hot Filament

ABSTRACTThe nucleation stage of diamond on silicon substrates was studied by atomic force microscopy. Samples were grown by hot filament chemical vapor deposition and substrate biases from -200 ν to +75 ν were investigated. The effects of the process on the substrate as well as on the morphology of the crystallites were observed using an atomic force microscope operating in tapping mode. It was observed that both the density and morphology of the diamond crystallites were greatly dependent on the applied bias values. The highest nucleation density was achieved for the -200 ν bias, when a plasma around the substrate holder was formed.

Sign in / Sign up

Export Citation Format

Share Document