Physical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models

2003 ◽  
Vol 82 (25) ◽  
pp. 4510-4512 ◽  
Author(s):  
Dietmar Schroeder ◽  
Alejandro Avellán
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Barrier Height ◽  
Leakage Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Explanation

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design

2021 ◽  
Vol 21 (8) ◽  
pp. 4230-4234
Author(s):  
Jun Hyeok Kim ◽  
Su Min Lee ◽  
Chan Ho Park
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Measurement Data ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling Methodology ◽  
Trap Assisted Tunneling ◽  
Protection Circuit ◽  
Current Characteristics ◽  
Static Discharge

A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.

Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

2016 ◽  
Vol 619 ◽  
pp. 48-52 ◽  
Author(s):  
Chengji Jin ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
He Guan ◽  
Zheng Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Semiconductor Structures

scholarly journals Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 720
Author(s):  
He Guan ◽  
Shaoxi Wang
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Schottky Emission ◽  
Oxide Semiconductor ◽  
Optimized Design ◽  
Mos Capacitors ◽  
Leakage Mechanism ◽  
High K

Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler–Nordheim tunneling became the main leakage mechanism at high fields with reverse biased condition. The sample with HfO2 (4 m)/Al2O3 (8 nm) laminated dielectric shows a high barrier height ϕB of 1.66 eV at 30 °C which was extracted from the Schottky emission mechanism, and this can be explained by fewer In–O and As–O states on the interface, as detected by the X-ray photoelectron spectroscopy test. These effects result in HfO2 (4 m)/Al2O3 (8 nm)/n-InAlAs MOS-capacitors presenting a low leakage current density of below 1.8 × 10−7 A/cm2 from −3 to 0 V at 30 °C. It is demonstrated that the HfO2/Al2O3 laminated dielectric with a thicker Al2O3 film of 8 nm is an optimized design to be the high-k dielectric used in Au-Pt-Ti/HfO2-Al2O3/InAlAs MOS capacitor applications.

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