Atomic layer deposition of Al2O3 on H-passivated Si. I. Initial surface reaction pathways with H/Si(100)-2×1

2003 ◽  
Vol 118 (22) ◽  
pp. 10221-10226 ◽  
Author(s):  
Mathew D. Halls ◽  
Krishnan Raghavachari
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Reaction Pathways ◽  
Initial Surface ◽  
Layer Deposition

Atomic Layer Deposition of Al 2 O 3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

2009 ◽  
Vol 26 (5) ◽  
pp. 053101 ◽  
Author(s):  
Shi Yu ◽  
Sun Qing-Qing ◽  
Dong Lin ◽  
Liu Han ◽  
Ding Shi-Jin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Reaction Pathways ◽  
Initial Surface ◽  
Layer Deposition

scholarly journals FTIR study of copper agglomeration during atomic layer deposition of copper

2009 ◽  
Vol 1155 ◽  
Author(s):  
Min Dai ◽  
Jinhee Kwon ◽  
Yves J. Chabal ◽  
Mathew D. Halls ◽  
Roy G. Gordon
Keyword(s):  
Fourier Transform ◽  
Atomic Layer Deposition ◽  
Molecular Hydrogen ◽  
Surface Reaction ◽  
Metallic Copper ◽  
Atomic Layer ◽  
Initial Surface ◽  
Phonon Modes ◽  
Layer Deposition

AbstractThe growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate ([Cu(sBu-amd)]2) and molecular hydrogen (H2) on SiO2/Si surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on SiO2 is presented involving the intensity variations of the SiO2 LO/TO phonon modes after chemical reaction with the Cu precursor and after the H2 precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C.

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 on H/Si(100)-2×1 Surface

2013 ◽  
Vol 750-752 ◽  
pp. 1052-1056 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Adsorption Energy ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer deposition TiO2on H/Si (100 )-2×1 surface using Ti (OCH3)4and H2O as precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption energy of Ti (OCH3)4on H/Si (100)2×1 surface is only-2.4 kJ/mol. The overall reaction of Ti (OCH3)4is exothermic, which indicates that Ti (OCH3)4half-reactions are favorable on thermodynamic. Howerver, H2O half-reactions are endothermic and thermodynamically unfavorable.

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 Using Ti(OCH3)4 and H2O as Precursors

2013 ◽  
Vol 785-786 ◽  
pp. 832-836 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer depositionTiO2using Ti (OCH3)4and H2O as the precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption of Ti (OCH3)4on OH/Si (100)2×1 surface is exothermic. However, the overall reaction of Ti (OCH3)4is endothermic. In addition, H2O half-reactions are endothermic and thermodynamically unfavorable.

scholarly journals First-principles study of the surface reactions of aminosilane precursors over WO3(001) during atomic layer deposition of SiO2

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16584-16592
Author(s):  
Kyungtae Lee ◽  
Youngseon Shim
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Reaction Pathways ◽  
Energy Diagram ◽  
First Principles Study ◽  
Layer Deposition

Energy diagram of reaction pathways for decomposition of different aminosilane precursors on a WO3 (001) surface.

Initial surface reactions in atomic layer deposition of Al2O3on the hydroxylated GaAs(001)-4 × 2 surface

2005 ◽  
Vol 17 (48) ◽  
pp. 7517-7522 ◽  
Author(s):  
Hong-Liang Lu ◽  
Wei Chen ◽  
Shi-Jin Ding ◽  
Min Xu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Initial Surface ◽  
Layer Deposition
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