scholarly journals First-principles study of the surface reactions of aminosilane precursors over WO3(001) during atomic layer deposition of SiO2

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16584-16592
Author(s):  
Kyungtae Lee ◽  
Youngseon Shim
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Reaction Pathways ◽  
Energy Diagram ◽  
First Principles Study ◽  
Layer Deposition

Energy diagram of reaction pathways for decomposition of different aminosilane precursors on a WO3 (001) surface.

scholarly journals Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55750-55755 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Euijoon Yoon ◽  
Gun-Do Lee
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
Fabrication Process ◽  
Device Performance ◽  
Memory Devices ◽  
Dissociation Reaction ◽  
First Principles Study ◽  
Layer Deposition

In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance.

scholarly journals Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39039-39046 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Daekwang Woo ◽  
Jong Myeong Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
First Principles ◽  
Dft Calculation ◽  
Atomic Layer ◽  
Deposition Cycle ◽  
Atomic Layer Deposition Cycle ◽  
First Principles Study ◽  
Layer Deposition ◽  
Dissociative Reactions

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6.

First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2Thin Films with Di(sec-butylamino)silane and Ozone

2013 ◽  
pp. 130911145338002 ◽  
Author(s):  
Liang Huang ◽  
Bo Han ◽  
Bing Han ◽  
Agnes Derecskei-Kovacs ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
First Principles Study ◽  
Layer Deposition

scholarly journals First principles study of the atomic layer deposition of alumina by TMA–H2O-process

2015 ◽  
Vol 17 (26) ◽  
pp. 17322-17334 ◽  
Author(s):  
Timo Weckman ◽  
Kari Laasonen
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Atomic Layer ◽  
Functional Study ◽  
Density Functional Study ◽  
First Principles Study ◽  
Layer Deposition

A comprehensive density functional study on the reaction mechanisms during the atomic layer deposition of alumina via trimethylaluminium–waterprocess.

Initial surface reactions in atomic layer deposition of Al2O3on the hydroxylated GaAs(001)-4 × 2 surface

2005 ◽  
Vol 17 (48) ◽  
pp. 7517-7522 ◽  
Author(s):  
Hong-Liang Lu ◽  
Wei Chen ◽  
Shi-Jin Ding ◽  
Min Xu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Initial Surface ◽  
Layer Deposition

Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition

2001 ◽  
Vol 479 (1-3) ◽  
pp. 121-135 ◽  
Author(s):  
J.W Elam ◽  
C.E Nelson ◽  
R.K Grubbs ◽  
S.M George
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Kinetics Of

Surface and sub-surface reactions during low temperature aluminium oxide atomic layer deposition on fiber-forming polymers

2010 ◽  
Vol 20 (20) ◽  
pp. 4213 ◽  
Author(s):  
Joseph C. Spagnola ◽  
Bo Gong ◽  
Sara A. Arvidson ◽  
Jesse S. Jur ◽  
Saad A. Khan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Layer Deposition
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