Near-Field Microwave and Embedded Modulated Scattering Technique (MST) for Dielectric Characterization of Materials

Author(s):  
D. Hughes
2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Blanka Škipina ◽  
Adriaan S. Luyt ◽  
Duško Dudić

Dielectric characterization of materials in the RF domain is usually carried out on samples with applied electroconductive electrodes. A high-quality contact between a sample and the measuring electrodes provides a stable current flow through the sample and information on the exact value of the electric field in which the sample is located. It also enables a simple measuring instrument to determine the dielectric parameters of the material being tested. However, the presence of contact potentials and the exchange of charge between the test material and the applied electrodes can mask some electrical phenomena in the material or significantly affect how we perceive these phenomena. In order to detect weak electrical processes in the material, for example the photoelectric response of non-polar polymers, contactless dielectric measurements must be carried out. The literature on non-contact dielectric measurements in the RF domain is poor, and because of that, this paper presents the methodology for determining the dielectric parameters of film-shaped materials in conditions of contactless dielectric measurements.


2021 ◽  
Vol 7 (7) ◽  
pp. 75176-75188
Author(s):  
Marcelo da Silva Matias ◽  
Luis Alberto Rabanal Ramirez

This paper presents the main techniques of electromagnetic characterization electromagnetic at microwave frequency. A detailed analysis of these is performed, indicating which materials under test (MUT) can be measured with the specific technique. Additionally, for the dielectric characterization, measurement results are presented with the best technique that suits this case.


Author(s):  
Simon Thomas

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.


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