Characterization of traps related to InAs quantum-dot growth-induced defects in GaAs by low-frequency noise measurements in reverse-biased Schottky diodes
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2007 ◽
Vol 16
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pp. 81-89
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2013 ◽
Vol 34
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pp. 1403-1405
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1999 ◽
Vol 142
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2001 ◽
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1995 ◽
Vol 38
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Vol 40
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pp. 2-6
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