Nd0.8Y0.2NiO3 thin films with room-temperature metal–insulator transition deposited by pulsed laser ablation

2003 ◽  
Vol 93 (9) ◽  
pp. 5136-5139 ◽  
Author(s):  
Jean-François Hamet ◽  
Andrea Ambrosini ◽  
Richard Retoux
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Switching ◽  
Room Temperature ◽  
Target Material ◽  
Insulator Transition ◽  
Fine Tuning ◽  
Perovskite Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Bond Angles

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Metal–insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

2002 ◽  
Vol 81 (4) ◽  
pp. 619-621 ◽  
Author(s):  
F. Capon ◽  
P. Laffez ◽  
J.-F. Bardeau ◽  
P. Simon ◽  
P. Lacorre ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

2013 ◽  
Vol 113 (4) ◽  
pp. 043707 ◽  
Author(s):  
Deyi Fu ◽  
Kai Liu ◽  
Tao Tao ◽  
Kelvin Lo ◽  
Chun Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vo2 Thin Films ◽  
Comprehensive Study

Room-temperature deposition of nanocrystalline PbWO 4 thin films by pulsed laser ablation

2006 ◽  
Vol 84 (1-2) ◽  
pp. 181-185 ◽  
Author(s):  
J.H. Ryu ◽  
J.-W. Yoon ◽  
K.B. Shim ◽  
N. Koshizaki
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Temperature Deposition
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