Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

2005 ◽  
Vol 72 (10) ◽  
Author(s):  
X. J. Chen ◽  
H.-U. Habermeier ◽  
H. Zhang ◽  
G. Gu ◽  
M. Varela ◽  
...  
Keyword(s):  
Thin Films ◽  
Colossal Magnetoresistance ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Switching ◽  
Room Temperature ◽  
Target Material ◽  
Insulator Transition ◽  
Fine Tuning ◽  
Perovskite Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Bond Angles

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Metal–insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

2002 ◽  
Vol 81 (4) ◽  
pp. 619-621 ◽  
Author(s):  
F. Capon ◽  
P. Laffez ◽  
J.-F. Bardeau ◽  
P. Simon ◽  
P. Lacorre ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Room temperature Mott metal-insulator transition and its systematic control in Sm1−xCaxNiO3 thin films

2010 ◽  
Vol 97 (3) ◽  
pp. 032114 ◽  
Author(s):  
P.-H. Xiang ◽  
S. Asanuma ◽  
H. Yamada ◽  
I. H. Inoue ◽  
H. Akoh ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Systematic Control

Low field magnetoresistance at the metal–insulator transition in epitaxial manganite thin films

2002 ◽  
Vol 81 (2) ◽  
pp. 319-321 ◽  
Author(s):  
A. de Andrés ◽  
S. Taboada ◽  
J. M. Colino ◽  
R. Ramı́rez ◽  
M. Garcı́a-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Low Field

Influence of Fe3O4 on metal–insulator transition temperature of La0.7Ca0.3MnO3 thin films

2019 ◽  
Vol 55 (1) ◽  
pp. 99-106
Author(s):  
Xiaofen Guan ◽  
Rongrong Ma ◽  
Guowei Zhou ◽  
Zhiyong Quan ◽  
G. A. Gehring ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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