Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance
2019 ◽
Vol 66
(9)
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pp. 3828-3833
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Keyword(s):
Keyword(s):
2013 ◽
Vol 06
(01)
◽
pp. 1250052
◽
Keyword(s):
Keyword(s):