scholarly journals Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance

2019 ◽  
Vol 66 (9) ◽  
pp. 3828-3833 ◽  
Author(s):  
Halid Mulaosmanovic ◽  
Evelyn T. Breyer ◽  
Thomas Mikolajick ◽  
Stefan Slesazeck
2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).


1997 ◽  
Vol 33 (12) ◽  
pp. 1051 ◽  
Author(s):  
M.Y. Li ◽  
W. Yuen ◽  
G.S. Li ◽  
C.J. Chang-Hasnain

2015 ◽  
Vol 26 (45) ◽  
pp. 455704 ◽  
Author(s):  
Jianling Meng ◽  
Rong Yang ◽  
Jing Zhao ◽  
Congli He ◽  
Guole Wang ◽  
...  

2013 ◽  
Vol 11 (1) ◽  
pp. 61-64 ◽  
Author(s):  
O. A. Mironov ◽  
A. H. A. Hassan ◽  
M. Uhlarz ◽  
S. Kiatgamolchai ◽  
A. Dobbie ◽  
...  

2018 ◽  
Vol 8 (9) ◽  
pp. 1553 ◽  
Author(s):  
Ming Li ◽  
Gong Chen ◽  
Ru Huang

In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional SNWT was superior to the circular or quadrate one in terms of the subthreshold swing, on/off ratio, and SCE immunity, which resulted from the smallest equivalent distance from the nanowire center to the surface in triangular SNWTs. Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. This process featured its self-stopped etching behavior on a silicon (1 1 1) crystal plane, which made the triangular cross section smooth and controllable. The fabricated triangular SNWT showed an excellent performance with a large Ion/Ioff ratio (~107), low SS (85 mV/dec), and preferable DIBL (63 mV/V). Finally, the surface roughness mobility of the fabricated device at a low temperature was also extracted to confirm the benefit of a stable cross section.


2013 ◽  
Vol 06 (01) ◽  
pp. 1250052 ◽  
Author(s):  
YANG TIAN ◽  
BINBIN YU ◽  
HONG-YU YANG ◽  
JI LIAO

Bifunctional nanospheres of silica encapsulating Fe3O4 and LaF3 : Eu nanoparticles were synthesized in a reverse microemulsion solution. The nanospheres were perfectly monodispersed with a small diameter of 20 nm. The composition of the bifunctional nanospheres was confirmed by powder X-ray diffraction. Their magnetic and luminescent properties were measured at room temperature. The relaxation efficiency and T2-weighted images showed the high-performance for the product as a resonance imaging contrast agent. In addition, a qualitative cell uptake in human cervical cancer HeLa cells demonstrated that the SFLE nanospheres were efficiently up-taken into cytosol. Taken together, these findings suggest that the SiO2 / Fe3O4 - LaF3 : Eu 3+ nanospheres are good luminescence probes for bio-imaging.


2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
T. Minh Nguyet Nguyen ◽  
Vinh-Dat Vuong ◽  
Mai Thanh Phong ◽  
Thang Van Le

Molybdenum disulfide (MoS2), an inorganic-layered material similar to structure of graphite, was randomly dispersed onto the surface of functionalized multiwalled carbon nanotubes to synthesized nanocomposite MoS2/CNT. The as-obtained product was characterized via SEM, TEM, TGA, X-ray diffraction, and Raman spectroscopies. It was confirmed from XRD that MoS2 layers with interlayer spacing of 0.614 nm were successfully produced. TEM images and Raman spectra indicated a random distribution of 20 nm sized nanoflake MoS2 on the surface of MWNTs. The electrochemical performance of materials are expected to pave the way for the utilized anode material for lithium-ion batteries.


2020 ◽  
Vol 4 (5) ◽  
pp. 2220-2228 ◽  
Author(s):  
Xueying Dong ◽  
Yifu Zhang ◽  
Qiang Chen ◽  
Hanmei Jiang ◽  
Qiushi Wang ◽  
...  

Nanotailoring of active manganese silicate with an average particle size of about 20 nm is realized by an ammonia-etching-assisted route, delivering a 3.55-times higher faradaic capacity than the traditional yolk–shell counterpart in hybrid supercapacitors.


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