scholarly journals Thickness dependence of leakage current behavior in epitaxial (Ba,Sr)TiO3 film capacitors

2003 ◽  
Vol 93 (3) ◽  
pp. 1725-1730 ◽  
Author(s):  
Kun Ho Ahn ◽  
Sang Sub Kim ◽  
Sunggi Baik
Keyword(s):  
Leakage Current ◽  
Thickness Dependence ◽  
Tio3 Film ◽  
Current Behavior

Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Kun Ho Ahn ◽  
Sang Sub Kim ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Leakage Current ◽  
Electric Fields ◽  
Thickness Dependence ◽  
Schottky Emission ◽  
Field Range ◽  
Critical Film Thickness ◽  
High Electric Fields ◽  
Current Behavior

AbstractThickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

2014 ◽  
Vol 21 (02) ◽  
pp. 1450029 ◽  
Author(s):  
XIU HONG DAI ◽  
HONG DONG ZHAO ◽  
LEI ZHANG ◽  
HUI JUAN ZHU ◽  
XIAO HONG LI ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Applied Electric Field ◽  
Conduction Mechanism ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ohmic Behavior ◽  
Different Temperatures ◽  
Limited Conduction ◽  
Current Behavior

Polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film is fabricated on Pt / Ti / SiO 2/ Si (111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt / BLFNO / Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt / BLFNO / Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt / BLFNO / Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films

2012 ◽  
Vol 77 ◽  
pp. 29-34 ◽  
Author(s):  
Michael Schneider ◽  
Tobias Strunz ◽  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Leakage Current ◽  
Microelectromechanical Systems ◽  
Constant Electric Field ◽  
Strong Negative Correlation ◽  
Axis Orientation ◽  
Sputter Deposited ◽  
Current Behavior

In microelectromechanical systems, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. This is due to excellent dielectric properties as well as a high chemical and thermal stability of AlN. In this work, we investigate the leakage current behavior (i.e. IV characteristic and charging behavior) of AlN thin films sputter deposited at varying plasma powers (300 W – 800 W) and deposition pressures (4 µbar – 8 µbar) up to an electric field of 0.5 MV/cm. First results show a Poole-Frenkel behavior for all samples with an increase in leakage current by orders of magnitude as the degree of c-axis orientation decreases. In addition, the discharging curves (i.e. meaning the current discharge after an applied constant electric field) agree well with the empirical Curie - von Schweidler Law (I(t) = I0 + I1t-n) and an increase of the parameter I1 with temperature is observed. I1 shows qualitatively the same behavior as the overall stored charge. Furthermore, the results show a strong negative correlation between the parameters n and the time constant τ1/2 (i.e. defined as the time after which half the stored charge has decayed), proofing that n is a good indicator for the decay time of the stored charge.

Leakage current behavior of SrBi2Ta2O9 ferroelectric thin films on different bottom electrodes

2002 ◽  
Vol 92 (10) ◽  
pp. 6160-6164 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Thin Films ◽  
Current Behavior

scholarly journals Dielectric and ferroelectric properties of CoCr2O4 nanoceramics

2019 ◽  
Vol 09 (03) ◽  
pp. 1950015 ◽  
Author(s):  
Pankaj Choudhary ◽  
P. Saxena ◽  
A. Yadav ◽  
V. N. Rai ◽  
A. Mishra
Keyword(s):  
Leakage Current ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Complex Impedance ◽  
Interfacial Polarization ◽  
Nyquist Plot ◽  
Dielectric Parameters ◽  
Electron Conduction ◽  
Auto Combustion ◽  
Current Behavior

CoCr2O4 nanoceramics are prepared by sol–gel auto combustion method. Synchrotron X-ray diffraction analysis affirms the single-phase pristine cubic structure with space group [Formula: see text]. Debye–Scherrer method estimates the crystallite size of main intense peak to be [Formula: see text][Formula: see text]nm. Prominent bands obtained in infrared spectra at 448 and 599[Formula: see text]cm[Formula: see text] are due to metal–oxygen stretching bond present at tetrahedral and octahedral sites. Dielectric parameters decrease as frequency increases from [Formula: see text] to [Formula: see text][Formula: see text]Hz that can be interpreted by Maxwell–Wagner-type interfacial polarization. Complex impedance spectra (Nyquist plot) reveal arc like behavior, which is mainly due to intergrain (grain boundary) resistance that also exhibits conducting nature of the nanoceramics. Weak ferroelectricity is mainly associated with the partial reversal of the polarization. Leakage current behavior follows the Ohmic and Child square law. Electron conduction process was interpreted by space-charge limited current (SCLC) mechanism. Leakage current behavior observed in cobalt chromite nanoceramics is mainly attributed to the oxygen vacancies.

Enhanced leakage current behavior of Sr2Ta2O7−x/SrTiO3 bilayer dielectrics for metal–insulator–metal capacitors

2011 ◽  
Vol 519 (17) ◽  
pp. 5734-5739 ◽  
Author(s):  
C. Baristiran Kaynak ◽  
M. Lukosius ◽  
I. Costina ◽  
B.Tillack ◽  
Ch. Wenger ◽  
...  
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Current Behavior
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