Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics

2002 ◽  
Vol 81 (21) ◽  
pp. 4038-4039 ◽  
Author(s):  
Hyunjun Sim ◽  
Hyunsang Hwang
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
Reliability Characteristics

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

2005 ◽  
Vol 98 (5) ◽  
pp. 054104 ◽  
Author(s):  
D. H. Triyoso ◽  
R. I. Hegde ◽  
S. Zollner ◽  
M. E. Ramon ◽  
S. Kalpat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Titanium Addition ◽  
Layer Deposition ◽  
Film Characteristics

Comparison of electrical and reliability characteristics of different 14 /spl Aring/ oxynitride gate dielectrics

2002 ◽  
Vol 23 (7) ◽  
pp. 416-418 ◽  
Author(s):  
Tung-Ming Pan ◽  
Hsiu-Shan Lin ◽  
Main-Gwo Chen ◽  
Chuan-Hsi Liu ◽  
Yih-Jau Chang
Keyword(s):  
Gate Dielectrics ◽  
Reliability Characteristics

Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

2014 ◽  
Vol 15 (12) ◽  
pp. 3780-3786 ◽  
Author(s):  
Sangmoo Choi ◽  
Canek Fuentes-Hernandez ◽  
Minseong Yun ◽  
Amir Dindar ◽  
Talha M. Khan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Organic Field Effect Transistor ◽  
Transistor Circuits ◽  
Effect Transistor
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