Intersubband absorption at λ∼1.3 μm in optimized GaN/AlGaN Bragg-confined structures

2002 ◽  
Vol 92 (12) ◽  
pp. 7672-7674 ◽  
Author(s):  
J. Radovanović ◽  
V. Milanović ◽  
D. Indjin ◽  
Z. Ikonić
Keyword(s):  
Intersubband Absorption ◽  
Confined Structures

scholarly journals Optimal design of gan-algan bragg-confined structures for intersubband absorption in the near-infrared spectral range

2003 ◽  
Vol 39 (10) ◽  
pp. 1297-1304 ◽  
Author(s):  
J. Radovanovic ◽  
V. Milanovic ◽  
Z. Ikonic ◽  
D. Indjin ◽  
V. Jovanovic ◽  
...  
Keyword(s):  
Optimal Design ◽  
Spectral Range ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Confined Structures

SUPERLATTICE TUNNELING DETECTORS OPERATING AT λ = 10 µm, BASED ON QUANTUM WELL INTERSUBBAND ABSORPTION

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-611-C5-614
Author(s):  
B. F. LEVINE ◽  
K. K. CHOI ◽  
C. G. BETHEA ◽  
J. WALKER ◽  
R. J. MALIK
Keyword(s):  
Quantum Well ◽  
Intersubband Absorption

scholarly journals Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 759-766 ◽  
Author(s):  
Kimberly Sablon ◽  
Andrei Sergeev ◽  
Xiang Zhang ◽  
Vladimir Mitin ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Spectral Characteristics ◽  
Nonradiative Recombination ◽  
Photovoltaic Devices ◽  
Electron Population ◽  
Selective Doping ◽  
Intersubband Absorption ◽  
Novel Approach ◽  
N Doping

ABSTRACTNovel approach to optimize quantum dot (QD) materials for specific optoelectronic applications is based on engineering of nanoscale potential profile, which is created by charged QDs. The nanoscale barriers prevent capture of photocarriers and drastically increase the photoelectron lifetime, which in turn strongly improves the photoconductive gain, responsivity, and sensitivity of photodetectors and decreases the nonradiative recombination losses of photovoltaic devices. QD charging may be created by various types of selective doping. To investigate effects of selective doping, we model, fabricated, and characterized AlGaAs/InAs QD structures with n-doping of QD layers, doping of interdot layers, and bipolar doping, which combines p-doping of QD layers with strong n-doping of the interdot space. We have measured spectral characteristics of photoresponse, photocurrent and dark current. The experimental data show that providing the same electron population of QDs, the bipolar doping creates the most contrasting nanoscale profile with the highest barriers around dots.

Optically stimulated intersubband absorption in undoped amorphousSi/SiO2 qiantum well

1994 ◽  
Vol 4 (6) ◽  
pp. 417-421
Author(s):  
Ole Keller ◽  
Anatoly Zayats ◽  
E. A. Vinogradov
Keyword(s):  
Intersubband Absorption

scholarly journals Spin relaxation times of two-dimensional holes from spin sensitive bleaching of intersubband absorption

2004 ◽  
Vol 96 (1) ◽  
pp. 420-424 ◽  
Author(s):  
Petra Schneider ◽  
J. Kainz ◽  
S. D. Ganichev ◽  
S. N. Danilov ◽  
U. Rössler ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Relaxation Times ◽  
Two Dimensional ◽  
Intersubband Absorption

Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well

2001 ◽  
Vol 78 (22) ◽  
pp. 3448-3450 ◽  
Author(s):  
Takeya Unuma ◽  
Teruyuki Takahashi ◽  
Takeshi Noda ◽  
Masahiro Yoshita ◽  
Hiroyuki Sakaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Phonon Scattering ◽  
Interface Roughness ◽  
Intersubband Absorption
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