Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis

2002 ◽  
Vol 92 (9) ◽  
pp. 5359-5370 ◽  
Author(s):  
Phuong Hoa Nguyen ◽  
Karl R. Hofmann ◽  
Gernot Paasch
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Monte Carlo Model ◽  
Full Band ◽  
Scattering Rates

scholarly journals Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 781-786
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

AbstractEnsemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Monte Carlo Based Calculation of Transport Parameters for Wide Band Gap Device Simulation

2000 ◽  
Vol 622 ◽  
Author(s):  
E. Bellotti ◽  
M. Farahmand ◽  
H.-E Nilsson ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Monte Carlo Model ◽  
Wide Band ◽  
Transport Parameters ◽  
Wide Band Gap ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Ionization Coefficients

ABSTRACTWe present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.

A full-band Monte Carlo model for hole transport in silicon

1997 ◽  
Vol 81 (5) ◽  
pp. 2250-2255 ◽  
Author(s):  
S. Jallepalli ◽  
M. Rashed ◽  
W.-K. Shih ◽  
C. M. Maziar ◽  
A. F. Tasch
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Model ◽  
Hole Transport ◽  
Full Band
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