Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates

2003 ◽  
Vol 94 (1) ◽  
pp. 375-386 ◽  
Author(s):  
Phuong Hoa Nguyen ◽  
Karl R. Hofmann ◽  
Gernot Paasch
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Monte Carlo Study ◽  
Full Band ◽  
Scattering Rates

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth

2011 ◽  
Vol 47 (4) ◽  
pp. 447-454 ◽  
Author(s):  
Michele Moresco ◽  
Francesco Bertazzi ◽  
Enrico Bellotti
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Full Band

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

2001 ◽  
Vol 184 (1-4) ◽  
pp. 194-198 ◽  
Author(s):  
Mats Hjelm ◽  
Kent Bertilsson ◽  
Hans-Erik Nilsson
Keyword(s):  
Monte Carlo ◽  
Transport Properties ◽  
Monte Carlo Study ◽  
Surface Transport ◽  
Full Band

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band

scholarly journals Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 781-786
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

2008 ◽  
Vol 5 (1) ◽  
pp. 43-46 ◽  
Author(s):  
K. Huet ◽  
C. Chassat ◽  
D.-P. Nguyen ◽  
S. Galdin-Retailleau ◽  
A. Bournel ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Double Gate ◽  
Full Band

Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

AbstractEnsemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 765-768 ◽  
Author(s):  
H.-E. Nilsson ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Hjelm
Keyword(s):  
Monte Carlo ◽  
High Field ◽  
Carrier Transport ◽  
Monte Carlo Study ◽  
Full Band
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