scholarly journals Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

2002 ◽  
Vol 81 (14) ◽  
pp. 2661-2662 ◽  
Author(s):  
P. Bhattacharya ◽  
S. Ghosh
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Modulation Bandwidth ◽  
Gaas Quantum Dot ◽  
Tunnel Injection

Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

2003 ◽  
Vol 39 (8) ◽  
pp. 952-962 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Siddhartha Ghosh ◽  
Sameer Pradhan ◽  
Jasprit Singh ◽  
Zong-Kwei Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Speed ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Speed Modulation ◽  
Gaas Quantum Dot ◽  
High Speed Modulation ◽  
Tunnel Injection

High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

2000 ◽  
Vol 76 (23) ◽  
pp. 3349-3351 ◽  
Author(s):  
Kohki Mukai ◽  
Yoshiaki Nakata ◽  
Koji Otsubo ◽  
Mitsuru Sugawara ◽  
Naoki Yokoyama ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

scholarly journals Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

2010 ◽  
Vol 18 (10) ◽  
pp. 10604 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Layer Transfer ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot
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