scholarly journals Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

2010 ◽  
Vol 18 (10) ◽  
pp. 10604 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Layer Transfer ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot

Cover Picture: Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au-mediated wafer bonding (Phys. Status Solidi C 8/2)

2011 ◽  
Vol 8 (2) ◽  
pp. n/a-n/a
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot

Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au-mediated wafer bonding

2010 ◽  
Vol 8 (2) ◽  
pp. 319-321 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot

Electrically pumped continuous-wave 1.3-µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates

2014 ◽  
Vol 8 (2) ◽  
pp. 20-24 ◽  
Author(s):  
Jiang Wu ◽  
Huiyun Liu ◽  
Mingchu Tang ◽  
Alwyn J. Seeds ◽  
Andrew Lee ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Continuous Wave ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot

1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

2012 ◽  
Vol 112 (3) ◽  
pp. 033107 ◽  
Author(s):  
Tomohiko Tatsumi ◽  
Katsuaki Tanabe ◽  
Katsuyuki Watanabe ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Quantum Dot Lasers ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gaas Quantum Dot ◽  
Free Metal

High-Temperature 1.3 µm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding

2013 ◽  
Vol 6 (8) ◽  
pp. 082703 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Timothy Rae ◽  
Katsuyuki Watanabe ◽  
Yasuhiko Arakawa
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Gaas Quantum Dot

scholarly journals Optimisation of 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

2015 ◽  
Vol 619 ◽  
pp. 012011 ◽  
Author(s):  
Mingchu Tang ◽  
Siming Chen ◽  
Jiang Wu ◽  
Qi Jiang ◽  
Dongyoung Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Gaas Quantum Dot

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

2013 ◽  
Vol 19 (4) ◽  
pp. 1901107-1901107 ◽  
Author(s):  
A. D. Lee ◽  
Qi Jiang ◽  
Mingchu Tang ◽  
Yunyan Zhang ◽  
A. J. Seeds ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Gaas Quantum Dot

scholarly journals Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

2017 ◽  
Vol 25 (5) ◽  
pp. 4632 ◽  
Author(s):  
Siming Chen ◽  
Mengya Liao ◽  
Mingchu Tang ◽  
Jiang Wu ◽  
Mickael Martin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Continuous Wave ◽  
Quantum Dot Lasers ◽  
Electrically Pumped ◽  
Gaas Quantum Dot
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