Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering

Wu-yun Quan; Dae M. Kim; Myoung Kwan Cho

doi:10.1063/1.1504173

Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering

Journal of Applied Physics ◽

10.1063/1.1504173 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3724-3729 ◽

Cited By ~ 8

Author(s):

Wu-yun Quan ◽

Dae M. Kim ◽

Myoung Kwan Cho

Keyword(s):

Metal Oxide ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Semiconductor Structures

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Reply to “Comment on ‘Unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering’ [J. Appl. Phys.92, 3724 (2002)]”

Journal of Applied Physics ◽

10.1063/1.1540222 ◽

2003 ◽

Vol 93 (5) ◽

pp. 3125-3126 ◽

Cited By ~ 1

Author(s):

Wu-yun Quan ◽

Dae M. Kim ◽

Myoung Kwan Cho

Keyword(s):

Metal Oxide ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Semiconductor Structures

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Comment on “Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering” [J. Appl. Phys.92, 3724 (2002)]

Journal of Applied Physics ◽

10.1063/1.1540221 ◽

2003 ◽

Vol 93 (5) ◽

pp. 3123-3124 ◽

Cited By ~ 1

Author(s):

M. V. Fischetti

Keyword(s):

Metal Oxide ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Semiconductor Structures

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Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1589173 ◽

2003 ◽

Vol 94 (3) ◽

pp. 2046-2052 ◽

Cited By ~ 4

Author(s):

M. M. A. Hakim ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Computationally Efficient ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

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Direct Tunneling Gate Current in Strained-Si/SiGe Metal-Oxide-Semiconductor Structures

2006 International Conference on Electrical and Computer Engineering ◽

10.1109/icece.2006.355678 ◽

2006 ◽

Author(s):

A. N. M. Zainuddin ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

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Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC$(000\bar{1})$ face

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.054103 ◽

2016 ◽

Vol 55 (5) ◽

pp. 054103 ◽

Cited By ~ 5

Author(s):

Naoki Kumagai ◽

Hiroshi Kimura ◽

Yasuhiko Onishi ◽

Mitsuo Okamoto ◽

Kenji Fukuda

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Slow Response ◽

Gate Current ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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Image force effects and the dielectric response of SiO2 in electron transport across metal–oxide–semiconductor structures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580708 ◽

1997 ◽

Vol 15 (3) ◽

pp. 784-789 ◽

Cited By ~ 14

Author(s):

H. J. Wen ◽

R. Ludeke ◽

D. M. Newns ◽

S. H. Lo

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Dielectric Response ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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