Spectroscopic characterization of stress-induced leakage current in sub 5-nm-thick silicon oxide film

2002 ◽  
Vol 92 (5) ◽  
pp. 2593-2601 ◽  
Author(s):  
Kenji Komiya ◽  
Yasuhisa Omura
Author(s):  
Hao Cui ◽  
Hongqiang Lu ◽  
I. Bhat ◽  
S. Murarka ◽  
W. Lanford ◽  
...  

2017 ◽  
Vol 68 (2) ◽  
pp. 232-237
Author(s):  
Malha Nazef Allaoua ◽  
Moussa Bounoughaz ◽  
Rachid Lamari

The study focused on the effect of cooling rate on the behaviour of oxide layers formed on silicon (Si) electrodes in 3% Sodium Chloride. All analysis conducted by electrochemical and spectral techniques confirmed that the stability of the silicon oxide film is influenced by the cooling kinetic used in the manufacturing process of Si material. The electronic structure model studied by Mott-Schottky measurements describes the passive film as a hetero-junction (p-n) composed of a metal/Si oxides interface and Si hydroxides/electrolyte interface.


1993 ◽  
Vol 64-65 ◽  
pp. 849-856 ◽  
Author(s):  
S. Vallon ◽  
B. Drévillon ◽  
C. Sénémaud ◽  
A. Gheorghiu ◽  
V. Yakovlev

1995 ◽  
Vol 7 (14) ◽  
pp. 2901-2907 ◽  
Author(s):  
Xiangyang Ma ◽  
Lideng Chen ◽  
Zhenguo Ji ◽  
Hongnian Yao ◽  
Duanlin Que

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