Current–voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy

2002 ◽  
Vol 92 (6) ◽  
pp. 3326-3331 ◽  
Author(s):  
Jaehwan Oh ◽  
R. J. Nemanich
Keyword(s):  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage

scholarly journals The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

2004 ◽  
Vol 85 (9) ◽  
pp. 1547-1549 ◽  
Author(s):  
S. Doğan ◽  
D. Johnstone ◽  
F. Yun ◽  
S. Sabuktagin ◽  
J. Leach ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Temperature Dependent ◽  
Hydrogen Etching ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage

Atomic Force Microscopy of the Local Electrical Properties of Bilayer Polyaniline-Polystyrene/P(VDF-TrFE) Composite

2021 ◽  
Vol 899 ◽  
pp. 506-511
Author(s):  
Artem V. Budaev ◽  
Ivanna N. Melnikovich ◽  
Vasily E. Melnichenko ◽  
Nikita A. Emelianov
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Polymer Nanocomposite ◽  
Charge Carriers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Piezoelectric Force Microscopy ◽  
Microscopy Techniques

Atomic force microscopy techniques (conductive-AFM, I-V spectroscopy and PFM) were used for characterisation of the local electrical properties of bilayer polyaniline-polystyrene/P(VDF-TrFE) polymer nanocomposite. Observed hysteresis of current-voltage characteristics confirms its memristive properties. It was caused by the influence of the ferroelectric polarization of P(VDF-TrFE) layer, the domain structure of which was visualised by piezoelectric force microscopy on the transport of charge carriers at the interface.

Effect of Gamma Radiation on ZnO Doped PVA Nanocomposite Thin Films for Escherichia coli Sensor

2015 ◽  
Vol 1107 ◽  
pp. 687-692 ◽  
Author(s):  
Noor Azwen Noor Azmy ◽  
Huda Abdullah ◽  
Norshafadzila Mohammad Naim ◽  
Aidil Abdul Hamid ◽  
Sahbudin Shaari ◽  
...  
Keyword(s):  
Thin Films ◽  
Escherichia Coli ◽  
Atomic Force Microscopy ◽  
Gamma Radiation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Nanocomposite Thin Films

The effect of gamma radiation on fabricated ZnO doped PVA nanocomposite thin films for determination of Escherichia coli has been investigated. Thin films of ZnO doped PVA were exposed to 60Co γ-radiation source at difference dose rate, ranging from 0 to 30 kGy at room temperature. The structural, morphological and electrical properties of the sample were investigated using X-ray diffraction (XRD), Atomic force microscopy (AFM) and Current-voltage (I-V) measurement. The X-ray diffraction (XRD) spectra have been performed to see the formation of crystal phases of all pure ZnO thin films. The diffraction patterns reveal the good crystalline quality and indicate the crystallization of the ZnO-PVA films strongly depends on radiation dose. The roughness of the thin film surface which can be seen by conducting Atomic force microscopy (AFM) measurement became smoother as the gamma radiation increased. The presence of Escherichia coli as a bacterial contamination in water was identified by measuring the changes of conductivity of thin films using current–voltage (I-V) measurement. The sensitivity of the sensors has been observed to be higher at a higher radiation dose.

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

2016 ◽  
Vol 858 ◽  
pp. 1137-1140 ◽  
Author(s):  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Salvatore di Franco ◽  
Raffaella Lo Nigro ◽  
Emanuela Schilirò ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Contact ◽  
Hot Electron ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current ◽  
High Frequency Device ◽  
Electron Transistors

This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a HET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

Sign in / Sign up

Export Citation Format

Share Document