Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitride

2002 ◽  
Vol 81 (6) ◽  
pp. 1092-1094 ◽  
Author(s):  
Nae-Man Park ◽  
Suk-Ho Choi ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Silicon Quantum Dots ◽  
Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

2001 ◽  
Vol 86 (7) ◽  
pp. 1355-1357 ◽  
Author(s):  
Nae-Man Park ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Quantum Dots

Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

2000 ◽  
Vol 638 ◽  
Author(s):  
Nae-Man Park ◽  
Sang-Hun Jeon ◽  
Hyunsang Hwang ◽  
Suk-Ho Choi ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Forward Bias ◽  
Chemical Vapor ◽  
Silicon Quantum Dots ◽  
Band Shift ◽  
Capacitance Voltage ◽  
Dot Density ◽  
Charging Effect

AbstractCapacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemical vapor deposition. The electron charging was decreased as the dot size was decreased. These results showed that the conduction band shift is larger than the valence band shift as the dot size decreased and, as a result, electrons are easily discharged in a-Si QDs due to the lower barrier height. For high dot-density-sample, the capacitance-voltage curves were also shifted toward the negative voltage direction when a higher forward bias was applied at forward condition due to the transfer of electrons trapped in the a-Sci QDs from the a-Sci QDs near Si substrate to those near the top metal.

Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride

2003 ◽  
Vol 83 (5) ◽  
pp. 1014-1016 ◽  
Author(s):  
Nae-Man Park ◽  
Sang-Hun Jeon ◽  
Hyun-Deok Yang ◽  
Hyunsang Hwang ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Charge Storage ◽  
Silicon Quantum Dots ◽  
Size Dependent

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Vacuum ◽  
2015 ◽  
Vol 121 ◽  
pp. 147-151 ◽  
Author(s):  
Wugang Liao ◽  
Xiangbin Zeng ◽  
Xixing Wen ◽  
Xiaoxiao Chen ◽  
Wenzhao Wang
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots ◽  
Silicon Nitride Films

Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices

2009 ◽  
Vol 129 (12) ◽  
pp. 1744-1746 ◽  
Author(s):  
Béchir Rezgui ◽  
Abel Sibai ◽  
Tetyana Nychyporuk ◽  
Mustapha Lemiti ◽  
Georges Brémond
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Optical Absorption ◽  
Absorption Properties ◽  
Silicon Quantum Dots

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

2015 ◽  
Vol 117 (2) ◽  
pp. 024304
Author(s):  
Xixing Wen ◽  
Xiangbin Zeng ◽  
Wenjun Zheng ◽  
Wugang Liao ◽  
Feng Feng
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Amorphous Silicon Carbide
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